Part Details for SUM110N10-08 by Vishay Intertechnologies
Overview of SUM110N10-08 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SUM110N10-08
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUM110N10-08
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Avnet Americas | Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110N10-08) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Tube | 0 |
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$3.4965 / $4.4418 | Buy Now |
Part Details for SUM110N10-08
SUM110N10-08 CAD Models
SUM110N10-08 Part Data Attributes:
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SUM110N10-08
Vishay Intertechnologies
Buy Now
Datasheet
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SUM110N10-08
Vishay Intertechnologies
Power Field-Effect Transistor, 110A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-263, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 437.5 W | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |