Datasheets
SUM110N06-3M9H-E3 by:

TRANSISTOR 110 A, 60 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power

Part Details for SUM110N06-3M9H-E3 by Vishay Siliconix

Overview of SUM110N06-3M9H-E3 by Vishay Siliconix

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Price & Stock for SUM110N06-3M9H-E3

Part # Distributor Description Stock Price Buy
DISTI # 70026023
RS MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.00325Ohm, ID 110A, TO-263,PD 375W, VGS +/-20V | Siliconix / Vishay SUM110N06-3M9H-E3 RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Container: Bulk 0
  • 800 $4.6400
  • 4,000 $4.4000
  • 8,000 $4.1700
  • 16,000 $3.9400
$3.9400 / $4.6400 RFQ

Part Details for SUM110N06-3M9H-E3

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SUM110N06-3M9H-E3 Part Data Attributes:

SUM110N06-3M9H-E3 Vishay Siliconix
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SUM110N06-3M9H-E3 Vishay Siliconix TRANSISTOR 110 A, 60 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 245 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.0039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 440 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUM110N06-3M9H-E3

This table gives cross-reference parts and alternative options found for SUM110N06-3M9H-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM110N06-3M9H-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUM110N06-3M9H-E3 Power Field-Effect Transistor, 110A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies SUM110N06-3M9H-E3 vs SUM110N06-3M9H-E3
Part Number Description Manufacturer Compare
SUM110N06-3M9H-E3 Power Field-Effect Transistor, 110A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies SUM110N06-3M9H-E3 vs SUM110N06-3M9H-E3
BUK763R9-60E Power Field-Effect Transistor Nexperia SUM110N06-3M9H-E3 vs BUK763R9-60E

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