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Transistors / Power Field-Effect Transistors / SUD50P08-25L-E3
Datasheets
SUD50P08-25L-E3 by:

Power Field-Effect Transistor, 12.5A I(D), 80V, 0.0252ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3

Part Details for SUD50P08-25L-E3 by Vishay Intertechnologies

Overview of SUD50P08-25L-E3 by Vishay Intertechnologies

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Price & Stock for SUD50P08-25L-E3

Part # Distributor Description Stock Price Buy
DISTI # 01AC5036
Newark Mosfet, P-Ch, -80V, -50A, To-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-50A, Drain Source Voltage Vds:-80V, On Resistance Rds(On):0.021Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Vishay SUD50P08-25L-E3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 17865
  • 1 $2.6600
  • 10 $2.2200
  • 25 $2.0700
  • 50 $1.9100
  • 100 $1.7700
  • 250 $1.6300
$1.6300 / $2.6600 Buy Now
DISTI # 75M5646
Newark Mosfet, P Channel, -80V, -50A, To-252-3, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:136W Rohs Compliant: Yes |Vishay SUD50P08-25L-E3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.3200
  • 4,000 $1.1900
  • 6,000 $1.1500
  • 10,000 $1.1000
$1.1000 / $1.3200 Buy Now
DISTI # 70AC6528
Newark Mosfet, P-Ch, -80V, -50A, To-252, Transistor Polarity:P Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:50A, On Resistance Rds(On):0.021Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V, Msl:- Rohs Compliant: Yes |Vishay SUD50P08-25L-E3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $2.0300
$2.0300 Buy Now
DISTI # SUD50P08-25L-E3
Avnet Americas Trans MOSFET P-CH 80V 12.5A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50P08-25L-E3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
  • 2,000 $1.0200
$1.0200 Buy Now
DISTI # 781-SUD50P08-25L-E3
Mouser Electronics MOSFET 80V 50A 136W 25.2mohm @ 10V RoHS: Compliant 149323
  • 1 $2.0600
  • 10 $1.7900
  • 100 $1.5100
  • 250 $1.4600
  • 500 $1.3300
  • 1,000 $1.2000
  • 2,000 $1.0700
$1.0700 / $2.0600 Buy Now
Future Electronics Single P-Channel 80 V 0.0252 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 2000
Reel
  • 2,000 $1.0900
$1.0900 Buy Now
Future Electronics Single P-Channel 80 V 0.0252 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 2000
Reel
  • 2,000 $0.8700
$0.8700 Buy Now
Bristol Electronics   5
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 12.5A I(D), 80V, 0.0252OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 1584
  • 1 $4.2390
  • 384 $2.3315
  • 859 $2.1195
$2.1195 / $4.2390 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 12.5A I(D), 80V, 0.0252OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 4
  • 1 $4.9500
  • 3 $4.1250
$4.1250 / $4.9500 Buy Now
DISTI # SUD50P08-25L-E3.
TTI MOSFET 80V P-CH MOSFET (D-S) 17 pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape Americas - 1920
In Stock
  • 10 $1.7700
$1.7700 Buy Now
DISTI # SUD50P08-25L-E3
TTI MOSFET 80V 50A 136W 25.2mohm @ 10V pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 74000
In Stock
  • 2,000 $0.9800
  • 6,000 $0.9600
$0.9600 / $0.9800 Buy Now
DISTI # SUD50P08-25L-E3
Avnet Americas Trans MOSFET P-CH 80V 12.5A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50P08-25L-E3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
  • 2,000 $1.0200
$1.0200 Buy Now
DISTI # SUD50P08-25L-E3
TME Transistor: P-MOSFET, unipolar, -80V, -50A, Idm: -40A, 95W Min Qty: 1 0
  • 1 $2.0500
  • 5 $1.8400
  • 25 $1.6300
  • 100 $1.4600
  • 500 $1.3700
$1.3700 / $2.0500 RFQ
DISTI # SUD50P08-25L-E3
Avnet Asia Trans MOSFET P-CH 80V 12.5A 3-Pin(2+Tab) DPAK (Alt: SUD50P08-25L-E3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 11 Weeks, 0 Days 0
  • 2,000 $1.5840
  • 4,000 $1.4784
  • 6,000 $1.4400
  • 10,000 $1.4035
  • 20,000 $1.3689
  • 50,000 $1.3359
  • 100,000 $1.3045
$1.3045 / $1.5840 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 9
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now
DISTI # SUD50P08-25L-E3
EBV Elektronik Trans MOSFET P-CH 80V 12.5A 3-Pin(2+Tab) DPAK (Alt: SUD50P08-25L-E3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 80V 50A 25.2m12.5A10V 3V250uA 1PCSPChannel TO-252 MOSFETs ROHS 1323
  • 1 $1.7408
  • 10 $1.4991
  • 30 $1.3470
  • 100 $1.1337
  • 500 $1.0636
  • 1,000 $1.0338
$1.0338 / $1.7408 Buy Now
Wuhan P&S 25.2m��,-80V,-50A,P-Channel Power MOSFET Min Qty: 1 4000
  • 1 $7.3700
  • 100 $2.4600
  • 500 $2.2800
  • 1,000 $2.2100
$2.2100 / $7.3700 Buy Now

Part Details for SUD50P08-25L-E3

SUD50P08-25L-E3 Part Data Attributes:

Parametric Data
SUD50P08-25L-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUD50P08-25L-E3 Vishay Intertechnologies Power Field-Effect Transistor, 12.5A I(D), 80V, 0.0252ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 101 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0252 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 235 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 136 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Turn-off Time-Max (toff) 310 ns
Turn-on Time-Max (ton) 65 ns

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