Datasheets
SUD50N03-09P by:

Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2

Part Details for SUD50N03-09P by Vishay Intertechnologies

Overview of SUD50N03-09P by Vishay Intertechnologies

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Price & Stock for SUD50N03-09P

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 4020
RFQ
Chip1Cloud N-Channel 30-V (D-S) MOSFET 1900
RFQ

Part Details for SUD50N03-09P

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SUD50N03-09P Part Data Attributes:

SUD50N03-09P Vishay Intertechnologies
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SUD50N03-09P Vishay Intertechnologies Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65.2 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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