Part Details for SUD50N03-06P-E3 by Vishay Siliconix
Overview of SUD50N03-06P-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for SUD50N03-06P-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70026311
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RS | N-Channel 30-V (D-S) 175 DEG.C MOSFET | Siliconix / Vishay SUD50N03-06P-E3 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Container: Bulk | 0 |
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$1.0000 / $1.1800 | RFQ |
Part Details for SUD50N03-06P-E3
SUD50N03-06P-E3 CAD Models
SUD50N03-06P-E3 Part Data Attributes
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SUD50N03-06P-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SUD50N03-06P-E3
Vishay Siliconix
TRANSISTOR 84 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 101.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 84 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 88 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SUD50N03-06P-E3
This table gives cross-reference parts and alternative options found for SUD50N03-06P-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD50N03-06P-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB60NE03L-10 | 60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | SUD50N03-06P-E3 vs STB60NE03L-10 |
| IRF1104 | Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | SUD50N03-06P-E3 vs IRF1104 |