Datasheets
SUB75N08-10 by:

Power Field-Effect Transistor, 75A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for SUB75N08-10 by Temic Semiconductors

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Part Details for SUB75N08-10

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SUB75N08-10 Part Data Attributes

SUB75N08-10 Temic Semiconductors
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SUB75N08-10 Temic Semiconductors Power Field-Effect Transistor, 75A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer TEMIC SEMICONDUCTORS
Package Description TO-263, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

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