Part Details for SUB75N08-09L by Vishay Siliconix
Overview of SUB75N08-09L by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for SUB75N08-09L
SUB75N08-09L CAD Models
SUB75N08-09L Part Data Attributes
|
SUB75N08-09L
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SUB75N08-09L
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SILICONIX INC | |
Part Package Code | D2PAK | |
Package Description | , | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 75 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for SUB75N08-09L
This table gives cross-reference parts and alternative options found for SUB75N08-09L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUB75N08-09L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTD4857NT4G | 12A, 25V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | Rochester Electronics LLC | SUB75N08-09L vs NTD4857NT4G |
2SJ660 | Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | SUB75N08-09L vs 2SJ660 |
IRF450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | SUB75N08-09L vs IRF450 |
IRF740R | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SUB75N08-09L vs IRF740R |
SSF7N80A | Power Field-Effect Transistor, 5A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | SUB75N08-09L vs SSF7N80A |
IRF1405ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | SUB75N08-09L vs IRF1405ZS |
FQP9N50 | 9A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SUB75N08-09L vs FQP9N50 |
FDB8878 | 48A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | Rochester Electronics LLC | SUB75N08-09L vs FDB8878 |
FQA7N80 | 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | SUB75N08-09L vs FQA7N80 |
SPP08P06P | 8.8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Rochester Electronics LLC | SUB75N08-09L vs SPP08P06P |