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Transistors / Power Field-Effect Transistors / STY105NM50N
Datasheets
STY105NM50N by: STMicroelectronics

N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package

Part Details for STY105NM50N by STMicroelectronics

Results Overview of STY105NM50N by STMicroelectronics

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Applications Automotive

STY105NM50N Information

STY105NM50N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STY105NM50N

Part # Distributor Description Stock Price Buy
DISTI # 2807233
Farnell MOSFET, N-CH, 500V, 110A, MAX-247 RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each 30
  • 1 $19.4699
  • 5 $19.4566
  • 10 $19.4432
$19.4432 / $19.4699 Buy Now
DISTI # 497-13290-5-ND
DigiKey MOSFET N-CH 500V 110A MAX247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 574
In Stock
  • 1 $25.2700
  • 30 $16.8193
  • 120 $15.9887
$15.9887 / $25.2700 Buy Now
DISTI # STY105NM50N
Avnet Americas Trans MOSFET N-CH 550V 110A 3-Pin(3+Tab) Max247 Tube - Rail/Tube (Alt: STY105NM50N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $16.0823
  • 1,200 $15.9811
  • 2,400 $15.6852
  • 3,600 $15.4000
  • 4,800 $15.1250
$15.1250 / $16.0823 Buy Now
DISTI # 511-STY105NM50N
Mouser Electronics MOSFETs N-Ch 500V 0.018 Ohm 110A Mdmesh II FET RoHS: Compliant 195
  • 1 $24.7700
  • 10 $22.0700
  • 25 $16.5200
  • 100 $15.9400
$15.9400 / $24.7700 Buy Now
STMicroelectronics N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package RoHS: Compliant Min Qty: 1 195
  • 1 $24.2800
  • 10 $21.6300
  • 25 $16.1900
  • 100 $15.6200
  • 250 $15.6200
$15.6200 / $24.2800 Buy Now
DISTI # STY105NM50N
Avnet Silica Trans MOSFET NCH 550V 110A 3Pin3Tab Max247 Tube (Alt: STY105NM50N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 1080
Buy Now
DISTI # STY105NM50N
EBV Elektronik Trans MOSFET NCH 550V 110A 3Pin3Tab Max247 Tube (Alt: STY105NM50N) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 500V 110A 0.02210V52A 625W 3V TO-247-3 MOSFETs ROHS 30
  • 1 $13.5526
  • 10 $12.9506
  • 30 $11.9081
  • 100 $10.9984
$10.9984 / $13.5526 Buy Now

Part Details for STY105NM50N

STY105NM50N CAD Models

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STY105NM50N Part Data Attributes

Parametric Data
STY105NM50N STMicroelectronics
Buy Now Datasheet
Compare Parts:
STY105NM50N STMicroelectronics N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STY105NM50N Related Parts

STY105NM50N Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STY105NM50N is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The recommended gate drive voltage for the STY105NM50N is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STY105NM50N, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.

  • The maximum allowed dv/dt for the STY105NM50N is 10 kV/μs, and it's essential to follow the recommended gate drive circuit design to minimize dv/dt stress.