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Transistors / Power Field-Effect Transistors / STY100NS20FD
Datasheets
STY100NS20FD by: STMicroelectronics

100A, 200V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MAX247, 3 PIN

Part Details for STY100NS20FD by STMicroelectronics

Results Overview of STY100NS20FD by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy

STY100NS20FD Information

STY100NS20FD by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STY100NS20FD

Part # Distributor Description Stock Price Buy
DISTI # STY100NS20FD
Avnet Americas Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) Max247 Tube - Rail/Tube (Alt: STY100NS20FD) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Tube 0
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,100A I(D),TO-247VAR 24
  • 1 $16.8750
  • 6 $15.0000
  • 18 $13.8750
$13.8750 / $16.8750 Buy Now

Part Details for STY100NS20FD

STY100NS20FD CAD Models

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STY100NS20FD Part Data Attributes

Parametric Data
STY100NS20FD STMicroelectronics
Buy Now Datasheet
Compare Parts:
STY100NS20FD STMicroelectronics 100A, 200V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MAX247, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, MAX247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 750 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 450 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STY100NS20FD

This table gives cross-reference parts and alternative options found for STY100NS20FD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STY100NS20FD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NDP706A National Semiconductor Corporation Check for Price TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power STY100NS20FD vs NDP706A
NDP606BE Texas Instruments Check for Price 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STY100NS20FD vs NDP606BE
IXFH12N100F IXYS Corporation $9.3389 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 STY100NS20FD vs IXFH12N100F
F10F6N Shindengen Electronic Manufacturing Co Ltd Check for Price Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN STY100NS20FD vs F10F6N
PHD83N03LT NXP Semiconductors Check for Price 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 STY100NS20FD vs PHD83N03LT
STP9NK65Z STMicroelectronics $0.7613 N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STY100NS20FD vs STP9NK65Z
IRF610B_FP001 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN STY100NS20FD vs IRF610B_FP001
PHD3055L NXP Semiconductors Check for Price 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 STY100NS20FD vs PHD3055L
FDP18N50 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN STY100NS20FD vs FDP18N50
PHB65N06LT NXP Semiconductors Check for Price 63A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN STY100NS20FD vs PHB65N06LT

STY100NS20FD Related Parts

STY100NS20FD Frequently Asked Questions (FAQ)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow. Additionally, consider derating the device's power handling capabilities at elevated temperatures.

  • The maximum allowed voltage on the drain-source pins is 200V, but it's recommended to operate within the specified maximum ratings to ensure device reliability and prevent damage.

  • To protect the device from ESD, handle the components in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Additionally, consider using ESD protection devices or circuits in the design.

  • The recommended gate drive voltage is typically between 10V to 15V, and the current depends on the specific application and switching frequency. A general guideline is to use a gate drive current of around 1A to 2A for optimal switching performance.