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Transistors / Power Field-Effect Transistors / STWA75N60M6
Datasheets
STWA75N60M6 by: STMicroelectronics

N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package

Part Details for STWA75N60M6 by STMicroelectronics

Results Overview of STWA75N60M6 by STMicroelectronics

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STWA75N60M6 Information

STWA75N60M6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STWA75N60M6

Part # Distributor Description Stock Price Buy
DISTI # 99AC9652
Newark Mosfet, N-Ch, 600V, 72A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:72A, ... Drain Source Voltage Vds:600V, On Resistance Rds(On):0.032Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Stmicroelectronics STWA75N60M6 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2
  • 1 $12.6000
$12.6000 Buy Now
DISTI # 497-STWA75N60M6-ND
DigiKey MOSFET N-CH 600V 72A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 600
In Stock
  • 1 $7.8300
  • 30 $7.6807
  • 120 $7.5476
  • 510 $7.3871
$7.3871 / $7.8300 Buy Now
DISTI # STWA75N60M6
Avnet Americas Transistor MOSFET N-CH 600V 72A 3-Pin TO-247 Tube - Rail/Tube (Alt: STWA75N60M6) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $7.4806
  • 1,200 $7.4336
  • 2,400 $7.2959
  • 3,600 $7.1633
  • 4,800 $7.0354
$7.0354 / $7.4806 Buy Now
DISTI # 511-STWA75N60M6
Mouser Electronics MOSFETs N-channel 600 V, 32 mOhm typ 72 A MDmesh M6 Power MOSFET RoHS: Compliant 507
  • 1 $7.6800
  • 600 $7.3800
$7.3800 / $7.6800 Buy Now
STMicroelectronics N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package RoHS: Compliant Min Qty: 1 507
  • 1 $7.5300
  • 10 $7.5300
  • 25 $7.5300
  • 50 $7.5300
  • 100 $7.5300
  • 250 $7.5300
$7.5300 Buy Now
DISTI # STWA75N60M6
TME Transistor: N-MOSFET, MDmesh™ M6, unipolar, 600V, 45A, Idm: 288A Min Qty: 1 0
  • 1 $11.9800
  • 10 $9.7800
  • 30 $8.6200
  • 600 $8.5400
$8.5400 / $11.9800 RFQ
DISTI # STWA75N60M6
Avnet Silica Transistor MOSFET NCH 600V 72A 3Pin TO247 Tube (Alt: STWA75N60M6) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 600
Buy Now
DISTI # STWA75N60M6
EBV Elektronik Transistor MOSFET NCH 600V 72A 3Pin TO247 Tube (Alt: STWA75N60M6) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STWA75N60M6

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STWA75N60M6 Part Data Attributes

Parametric Data
STWA75N60M6 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STWA75N60M6 STMicroelectronics N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STWA75N60M6 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STWA75N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and to ensure that the device is properly cooled to prevent overheating.

  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to provide a good thermal path, and the device should be placed in a location that allows for good airflow.

  • The recommended gate drive voltage and current for the STWA75N60M6 are not explicitly stated in the datasheet, but as a general rule, a gate drive voltage of 10-15V and a current of 1-2A are typical values for this type of device. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency.

  • To prevent shoot-through current in a half-bridge configuration, it's essential to ensure that the gate drive signals are properly synchronized and that there is a sufficient dead-time between the turn-off of one device and the turn-on of the other. Additionally, the use of a dead-time generator or a dedicated half-bridge driver IC can help to prevent shoot-through current.

  • The recommended layout and routing for the STWA75N60M6 involve minimizing the length and inductance of the power traces, using a solid ground plane, and placing the device close to the power source. Additionally, the use of a Kelvin connection for the gate drive signal can help to reduce noise and improve the overall performance of the device.