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Transistors / Power Field-Effect Transistors / STW60N10
Datasheets
STW60N10 by:
STMicroelectronics
Honest Han
STMicroelectronics
Not Found

60A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

Part Details for STW60N10 by STMicroelectronics

Results Overview of STW60N10 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STW60N10 Information

STW60N10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW60N10

Part # Distributor Description Stock Price Buy
Bristol Electronics   8
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,60A I(D),TO-247 1
  • 1 $10.9500
$10.9500 Buy Now

Part Details for STW60N10

STW60N10 CAD Models

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STW60N10 Part Data Attributes

Parametric Data
STW60N10 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW60N10 STMicroelectronics 60A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 720 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW60N10

This table gives cross-reference parts and alternative options found for STW60N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW60N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MTH40N08 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 40A I(D), 80V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC STW60N10 vs MTH40N08
RFG40N10 Harris Semiconductor Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 STW60N10 vs RFG40N10
MTW45N10E onsemi Check for Price 45A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN STW60N10 vs MTW45N10E
MTH25N10 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 25A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC STW60N10 vs MTH25N10
SMW60N10 Vishay Siliconix Check for Price Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD STW60N10 vs SMW60N10
STW50N10 STMicroelectronics Check for Price 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STW60N10 vs STW50N10
BUZ344 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA STW60N10 vs BUZ344
Part Number Manufacturer Composite Price Description Compare
RFG40N10 Intersil Corporation Check for Price 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 STW60N10 vs RFG40N10
MTH25N10 Motorola Mobility LLC Check for Price 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC STW60N10 vs MTH25N10
MTH25N08 Motorola Mobility LLC Check for Price 25A, 80V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC STW60N10 vs MTH25N08
MTH40N10 Motorola Mobility LLC Check for Price 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC STW60N10 vs MTH40N10
IRFP150NPBF Infineon Technologies AG $1.0201 Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 STW60N10 vs IRFP150NPBF
FQH44N10_F133 onsemi Check for Price N-Channel QFET® MOSFET 100V, 48A, 39mΩ, TO-247 3L, 3600-RAIL STW60N10 vs FQH44N10_F133
IRFP150N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN STW60N10 vs IRFP150N
RFG40N10 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, STW60N10 vs RFG40N10
IRFP150N International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN STW60N10 vs IRFP150N
IRFP150N Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, STW60N10 vs IRFP150N

STW60N10 Related Parts

STW60N10 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STW60N10 is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, connect the gate-source voltage (Vgs) to a voltage source between 2V and 10V, and the drain-source voltage (Vds) to a voltage source between 10V and 60V. Also, ensure the gate current (Ig) is within the recommended range of ±10mA.

  • The recommended gate resistor value for the STW60N10 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching times.

  • Yes, the STW60N10 is suitable for high-frequency switching applications up to 100kHz. However, it's essential to consider the device's switching losses, thermal management, and layout design to minimize electromagnetic interference (EMI) and ensure reliable operation.

  • To protect the STW60N10 from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent excessive current flow.