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N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube | 0Tube |
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$6.3900 | Buy Now |
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Bristol Electronics | 550 |
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RFQ | ||
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Component Electronics, Inc | IN STOCK SHIP TODAY | 10 |
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$9.0000 / $13.8500 | Buy Now |
DISTI #
STW55NM60ND
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EBV Elektronik | Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 Tube (Alt: STW55NM60ND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 450 |
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Buy Now | |
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LCSC | TO-247 MOSFETs ROHS | 30 |
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$10.6536 / $12.7136 | Buy Now |
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STW55NM60ND
STMicroelectronics
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Datasheet
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STW55NM60ND
STMicroelectronics
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-247AC | |
Package Description | ROHS COMPLIANT, TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 850 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 51 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 350 W | |
Pulsed Drain Current-Max (IDM) | 204 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STW55NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW55NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STW56N60DM2 | N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | STMicroelectronics | STW55NM60ND vs STW56N60DM2 |
IPW60R070C6FKSA1 | Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | STW55NM60ND vs IPW60R070C6FKSA1 |