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Part Details for STW48NM60N by STMicroelectronics
Overview of STW48NM60N by STMicroelectronics
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STW48NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47T9447
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Newark | Mosfet, N Ch, 600V, 39A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:39A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.2V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STW48NM60N RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-11367-5-ND
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DigiKey | MOSFET N-CH 600V 44A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
575 In Stock |
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$4.6664 / $8.7800 | Buy Now |
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DISTI #
STW48NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW48NM60N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$4.3941 | Buy Now |
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DISTI #
STW48NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW48NM60N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$4.3941 | Buy Now |
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DISTI #
511-STW48NM60N
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Mouser Electronics | MOSFETs N-Ch 600V 0.055 Ohm 39A Mdmesh II RoHS: Compliant | 1737 |
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$4.6600 / $8.7700 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 | 1737 |
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$5.1500 / $8.6000 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.07 Ohm 330 W Mdmesh Flange Mount Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks Container: Tube | 600Tube |
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$4.5700 / $5.0300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.07 Ohm 330 W Mdmesh Flange Mount Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 20 Weeks Container: Tube | 0Tube |
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$4.5700 / $5.0300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.07 Ohm 330 W Mdmesh Flange Mount Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 16 Weeks Container: Tube | 0Tube |
|
$4.5700 / $5.0600 | Buy Now |
|
DISTI #
STW48NM60N
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TME | Transistor: N-MOSFET, MDmesh™ ||, unipolar, 600V, 28A, 330W, TO247 Min Qty: 1 | 38 |
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$4.5900 / $8.5600 | Buy Now |
Part Details for STW48NM60N
STW48NM60N CAD Models
STW48NM60N Part Data Attributes
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STW48NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW48NM60N
STMicroelectronics
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 457 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 39 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 255 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |