Part Details for STW28NM60ND by STMicroelectronics
Overview of STW28NM60ND by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STW28NM60ND
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-14202-5-ND
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DigiKey | MOSFET N-CH 600V 23A TO247 Min Qty: 1 Lead time: 42 Weeks Container: Tube |
127 In Stock |
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$3.6110 / $7.4600 | Buy Now |
DISTI #
V79:2366_17786673
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Arrow Electronics | Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1612 | Americas - 532 |
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$2.9480 | Buy Now |
DISTI #
30545034
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Verical | Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube Min Qty: 2 Package Multiple: 1 Date Code: 1612 | Americas - 532 |
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$2.9480 | Buy Now |
Part Details for STW28NM60ND
STW28NM60ND CAD Models
STW28NM60ND Part Data Attributes
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STW28NM60ND
STMicroelectronics
Buy Now
Datasheet
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STW28NM60ND
STMicroelectronics
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 92 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |