Datasheets
STW28NM60ND by: STMicroelectronics

N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

Part Details for STW28NM60ND by STMicroelectronics

Overview of STW28NM60ND by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STW28NM60ND

Part # Distributor Description Stock Price Buy
DISTI # 497-14202-5-ND
DigiKey MOSFET N-CH 600V 23A TO247 Min Qty: 1 Lead time: 42 Weeks Container: Tube 127
In Stock
  • 1 $7.4600
  • 30 $4.3037
  • 120 $3.6110
$3.6110 / $7.4600 Buy Now
DISTI # V79:2366_17786673
Arrow Electronics Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1612 Americas - 532
  • 1 $2.9480
$2.9480 Buy Now
DISTI # 30545034
Verical Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube Min Qty: 2 Package Multiple: 1 Date Code: 1612 Americas - 532
  • 2 $2.9480
$2.9480 Buy Now

Part Details for STW28NM60ND

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STW28NM60ND Part Data Attributes

STW28NM60ND STMicroelectronics
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STW28NM60ND STMicroelectronics N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 92 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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