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Part Details for STW26NM60ND by STMicroelectronics
Results Overview of STW26NM60ND by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STW26NM60ND Information
STW26NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW26NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STW26NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 21A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW26NM60ND) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Tube | 0 |
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RFQ | |
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Vyrian | Transistors | 1275 |
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RFQ |
Part Details for STW26NM60ND
STW26NM60ND CAD Models
STW26NM60ND Part Data Attributes
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STW26NM60ND
STMicroelectronics
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Datasheet
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STW26NM60ND
STMicroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STW26NM60ND Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STW26NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the layout guidelines provided in the datasheet.
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The maximum input voltage that the STW26NM60ND can handle is 26V, but it is recommended to operate within the recommended input voltage range of 8-20V for optimal performance.
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To protect the STW26NM60ND from overcurrent and overheating, it is recommended to use an external current sense resistor and to implement overcurrent protection and thermal shutdown circuits.
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Yes, the STW26NM60ND can be used in high-temperature applications up to 150°C, but the maximum operating temperature is 125°C for optimal performance and reliability.