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N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3541
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Newark | Mosfet, N-Ch, 600V, 20A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:20A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STW26NM60N Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 6815 |
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$3.5300 / $7.3900 | Buy Now |
DISTI #
497-9066-5-ND
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DigiKey | N-channel 600 V, 0.135 Ohm typ., Min Qty: 1 Container: Tube |
190 In Stock |
|
$3.8309 / $7.2100 | Buy Now |
DISTI #
STW26NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW26NM60N) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$3.9129 / $4.4526 | Buy Now |
DISTI #
15AC4532
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 15AC4532) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 19 Weeks, 3 Days Container: Bulk | 0 |
|
$3.6500 | Buy Now |
DISTI #
94T3541
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 94T3541) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 406 Partner Stock |
|
$6.4100 | Buy Now |
DISTI #
511-STW26NM60N
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Mouser Electronics | MOSFET N-channel 600 V Mdmesh II Power RoHS: Compliant | 398 |
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$3.7700 / $6.8900 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 | 400 |
|
$4.5500 / $6.7500 | Buy Now |
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Future Electronics | Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 1034Tube |
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$1.3200 / $1.5000 | Buy Now |
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Future Electronics | Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 100Tube |
|
$3.5800 / $4.1400 | Buy Now |
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Future Electronics | Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
|
$3.5800 / $3.9800 | Buy Now |
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STW26NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW26NM60N
STMicroelectronics
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-247 | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks, 3 Days | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 610 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.165 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STW26NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW26NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPA07N60C3 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | Infineon Technologies AG | STW26NM60N vs SPA07N60C3 |
SML50B26FR3 | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | TT Electronics Resistors | STW26NM60N vs SML50B26FR3 |
STW25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package | STMicroelectronics | STW26NM60N vs STW25NM60ND |
SGSP491 | 40A, 60V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | STW26NM60N vs SGSP491 |
NDP7050J69Z | Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STW26NM60N vs NDP7050J69Z |
IRF9622 | Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STW26NM60N vs IRF9622 |
NDP7050LJ69Z | Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STW26NM60N vs NDP7050LJ69Z |
SMP60N05 | 50A, 50V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | STW26NM60N vs SMP60N05 |
SML50B26F | 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | TT Electronics Power and Hybrid / Semelab Limited | STW26NM60N vs SML50B26F |
SPP07N60CFDHKSA1 | Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STW26NM60N vs SPP07N60CFDHKSA1 |