Part Details for STW21NM60ND by STMicroelectronics
Results Overview of STW21NM60ND by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW21NM60ND Information
STW21NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW21NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STW21NM60ND
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TME | Transistor: N-MOSFET, FDmesh™ II, unipolar, 600V, 10A, 140W, TO247 Min Qty: 1 | 0 |
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$2.6800 / $3.7400 | RFQ |
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ComSIT USA | N-CHANNEL 600 V, 0.17 OHM, 17 A-TO-247 FDMESH II POWER MOSFET Power Field-Effect Transistor, 17A I(D... more ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STW21NM60ND
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Avnet Silica | Trans MOSFET NCH 600V 17A 3Pin3Tab TO247 Tube (Alt: STW21NM60ND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip-Germany GmbH | RoHS: Not Compliant | 600 |
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RFQ | |
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DISTI #
STW21NM60ND
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EBV Elektronik | Trans MOSFET NCH 600V 17A 3Pin3Tab TO247 Tube (Alt: STW21NM60ND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STW21NM60ND
STW21NM60ND CAD Models
STW21NM60ND Part Data Attributes
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STW21NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW21NM60ND
STMicroelectronics
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 610 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW21NM60ND
This table gives cross-reference parts and alternative options found for STW21NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW21NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW24N60DM2 | STMicroelectronics | $3.4975 | N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package | STW21NM60ND vs STW24N60DM2 |
| TK16N60W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | STW21NM60ND vs TK16N60W5 |
STW21NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature of the STW21NM60ND is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
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The maximum current rating of the STW21NM60ND is 21A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the STW21NM60ND from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.
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The recommended gate drive voltage for the STW21NM60ND is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance.