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Transistors / Power Field-Effect Transistors / STW13NK100Z
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STW13NK100Z by: STMicroelectronics

N-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package

Part Details for STW13NK100Z by STMicroelectronics

Results Overview of STW13NK100Z by STMicroelectronics

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STW13NK100Z Information

STW13NK100Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW13NK100Z

Part # Distributor Description Stock Price Buy
DISTI # 59M2218
Newark Power Mosfet, N Channel, 13 A, 1 Kv, 700 Mohm, 10 V, 3.75 V Rohs Compliant: No |Stmicroelectronics S... TW13NK100Z more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2116
  • 1 $9.8300
  • 10 $8.7100
  • 25 $7.5900
$7.5900 / $9.8300 Buy Now
DISTI # 497-3556-5-ND
DigiKey MOSFET N-CH 1000V 13A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube 198
In Stock
  • 1 $8.7000
  • 30 $6.1150
$6.1150 / $8.7000 Buy Now
DISTI # STW13NK100Z
Avnet Americas Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW13NK100Z) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $6.1925
  • 1,200 $6.1536
  • 2,400 $6.0396
  • 3,600 $5.9298
  • 4,800 $5.8239
$5.8239 / $6.1925 Buy Now
DISTI # STW13NK100Z
Avnet Americas Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW13NK100Z) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $6.1925
  • 1,200 $6.1536
  • 2,400 $6.0396
  • 3,600 $5.9298
  • 4,800 $5.8239
$5.8239 / $6.1925 Buy Now
DISTI # 511-STW13NK100Z
Mouser Electronics MOSFETs N-Ch 1000 Volt 13A Zener SuperMESH RoHS: Compliant 689
  • 1 $8.7000
  • 25 $6.1200
  • 1,200 $6.1100
$6.1100 / $8.7000 Buy Now
DISTI # E02:0323_00209977
Arrow Electronics Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2415 Europe - 6128
  • 1 $4.3463
  • 25 $3.8138
  • 1,200 $2.2408
$2.2408 / $4.3463 Buy Now
DISTI # V36:1790_06567913
Arrow Electronics Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks Date Code: 2413 Americas - 3748
  • 600 $5.9130
  • 1,200 $5.8630
$5.8630 / $5.9130 Buy Now
STMicroelectronics N-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 689
  • 1 $8.5300
  • 10 $8.5300
  • 25 $6.0000
  • 100 $6.0000
  • 250 $6.0000
$6.0000 / $8.5300 Buy Now
Future Electronics N-Channel 1 kV 0.7 Ω 350 W Zener Protected SuperMESH Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 16 Weeks Container: Tube 0
Tube
  • 30 $6.5600
  • 90 $6.5000
  • 150 $6.4800
  • 300 $6.4500
  • 600 $6.4000
$6.4000 / $6.5600 Buy Now
Future Electronics N-Channel 1 kV 0.7 Ω 350 W Zener Protected SuperMESH Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 20 Weeks Container: Tube 0
Tube
  • 30 $6.3200
  • 90 $6.2700
  • 150 $6.2500
  • 300 $6.2200
  • 600 $6.1700
$6.1700 / $6.3200 Buy Now
DISTI # 79933586
Verical Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube Min Qty: 2 Package Multiple: 1 Date Code: 2415 Americas - 6128
  • 2 $4.1945
  • 25 $3.6806
  • 1,200 $2.1625
$2.1625 / $4.1945 Buy Now
DISTI # 79323400
Verical Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube Min Qty: 600 Package Multiple: 600 Date Code: 2413 Americas - 3600
  • 600 $5.9130
  • 1,200 $5.8630
$5.8630 / $5.9130 Buy Now
Bristol Electronics   31
RFQ
DISTI # STW13NK100Z
TME Transistor: N-MOSFET, unipolar, 1000V, 8.2A, 350W, TO247, ESD Min Qty: 1 117
  • 1 $9.8200
  • 10 $7.6300
  • 30 $7.2600
  • 510 $6.3700
  • 1,020 $6.1600
$6.1600 / $9.8200 Buy Now
ComSIT USA N-CHANNEL 1000V-0.56OHM-13A-TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transis... tor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC more ECCN: EAR99 RoHS: Compliant Stock DE - 29
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STW13NK100Z
Avnet Silica Trans MOSFET NCH 1KV 13A 3Pin3Tab TO247 Tube (Alt: STW13NK100Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 21930
Buy Now
DISTI # STW13NK100Z
EBV Elektronik Trans MOSFET NCH 1KV 13A 3Pin3Tab TO247 Tube (Alt: STW13NK100Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 3000
Buy Now
LCSC 1000V 13A 350W 0.710V6.5A 4.5V 1 N-channel TO-247-3 MOSFETs ROHS 20
  • 1 $9.4248
  • 10 $8.1289
  • 30 $7.3383
  • 100 $6.6760
  • 500 $6.5930
$6.5930 / $9.4248 Buy Now
Vyrian Transistors 4221
RFQ
Win Source Electronics MOSFET N-CH 1KV 13A TO-247 6000
  • 6 $13.0557
  • 13 $12.2135
  • 20 $11.7923
  • 28 $10.9500
  • 36 $10.5288
  • 45 $10.1078
$10.1078 / $13.0557 Buy Now

Part Details for STW13NK100Z

STW13NK100Z CAD Models

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STW13NK100Z Part Data Attributes

Parametric Data
STW13NK100Z STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW13NK100Z STMicroelectronics N-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247AC
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 350 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW13NK100Z

This table gives cross-reference parts and alternative options found for STW13NK100Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW13NK100Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFS620 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW13NK100Z vs IRFS620
SPA16N50C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN STW13NK100Z vs SPA16N50C3
IXFH68N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, STW13NK100Z vs IXFH68N20
IRF620B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW13NK100Z vs IRF620B
ISL9N312AP3 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, STW13NK100Z vs ISL9N312AP3
STW9NB90 STMicroelectronics Check for Price 9.7A, 900V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STW13NK100Z vs STW9NB90
STD1NA60T4 STMicroelectronics Check for Price 1.6A, 600V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 STW13NK100Z vs STD1NA60T4
SPP04N60C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STW13NK100Z vs SPP04N60C3
2SK3512-01S Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 STW13NK100Z vs 2SK3512-01S
FQP5N40 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW13NK100Z vs FQP5N40

STW13NK100Z Related Parts

STW13NK100Z Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STW13NK100Z is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.

  • To ensure reliability in high-temperature applications, it is essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and derating the device according to the temperature rating.

  • The recommended gate drive voltage for the STW13NK100Z is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.

  • To protect the STW13NK100Z from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a circuit breaker.

  • The maximum allowed dv/dt for the STW13NK100Z is 10 kV/μs, but it is recommended to limit dv/dt to 5 kV/μs or less to ensure reliable operation.