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Transistors / Power Field-Effect Transistors / STW12NA60
Datasheets
STW12NA60 by: STMicroelectronics

12A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

Part Details for STW12NA60 by STMicroelectronics

Results Overview of STW12NA60 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STW12NA60 Information

STW12NA60 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for STW12NA60

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STW12NA60 Part Data Attributes

Parametric Data
STW12NA60 STMicroelectronics
Buy Now Datasheet
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STW12NA60 STMicroelectronics 12A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 110 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 190 W
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-on Time-Max (ton) 85 ns

Alternate Parts for STW12NA60

This table gives cross-reference parts and alternative options found for STW12NA60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW12NA60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STW12NA60 vs IPB80N06S2LH5ATMA1
IXFH68N20 Littelfuse Inc Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, STW12NA60 vs IXFH68N20
STW10NK80Z STMicroelectronics $2.0575 N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package STW12NA60 vs STW10NK80Z
IXFK60N55Q2 Littelfuse Inc Check for Price Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN STW12NA60 vs IXFK60N55Q2
STW20NK70Z STMicroelectronics Check for Price 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STW12NA60 vs STW20NK70Z
IRLSZ34 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW12NA60 vs IRLSZ34
IPP45N06S4-09 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 45A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STW12NA60 vs IPP45N06S4-09
2SK2464 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN STW12NA60 vs 2SK2464
SPP04N60C2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN STW12NA60 vs SPP04N60C2
SSH7N60B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN STW12NA60 vs SSH7N60B

STW12NA60 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STW12NA60 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings, as well as its thermal impedance and switching characteristics.

  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and that the gate resistance is low (typically <10 ohms). Also, consider using a gate driver with a high current capability and a low output impedance to quickly charge and discharge the gate capacitance.

  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate trace as short as possible and use a ground plane under the device to reduce inductance. Also, consider using a Kelvin connection for the source pin to reduce parasitic inductance.

  • To calculate the thermal resistance of the STW12NA60 in a specific application, consider the device's junction-to-case thermal resistance (RthJC), case-to-ambient thermal resistance (RthCA), and the thermal interface material's thermal resistance (RthTIM). Use the following equation: RthJA = RthJC + RthCA + RthTIM. Consult the datasheet and application notes for more information.

  • Recommended thermal management techniques for the STW12NA60 include using a heat sink with a high thermal conductivity, applying a thermal interface material (TIM) between the device and heat sink, and ensuring good airflow around the heat sink. Consider using a forced-air cooling system or a liquid cooling system for high-power applications.