Datasheets
STU8NM50N by: STMicroelectronics

5A, 500V, 0.79ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3

Part Details for STU8NM50N by STMicroelectronics

Overview of STU8NM50N by STMicroelectronics

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Price & Stock for STU8NM50N

Part # Distributor Description Stock Price Buy
DISTI # 497-12368-ND
DigiKey MOSFET N-CH 500V 5A IPAK Min Qty: 1 Lead time: 19 Weeks Container: Tube 1814
In Stock
  • 1 $1.7500
  • 75 $1.4075
  • 150 $1.1581
  • 525 $0.9799
  • 1,050 $0.8314
$0.8314 / $1.7500 Buy Now
DISTI # V79:2366_17781928
Arrow Electronics Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) IPAK Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1236 Americas - 3276
  • 1 $0.6682
$0.6682 Buy Now
DISTI # 26113399
Verical Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) IPAK Tube Min Qty: 9 Package Multiple: 1 Date Code: 1236 Americas - 3276
  • 9 $0.6682
$0.6682 Buy Now
Bristol Electronics   150
RFQ
Perfect Parts Corporation   4144
RFQ

Part Details for STU8NM50N

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STU8NM50N Part Data Attributes

STU8NM50N STMicroelectronics
Buy Now Datasheet
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STU8NM50N STMicroelectronics 5A, 500V, 0.79ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-251
Package Description IPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 140 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.79 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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