Datasheets
STU4N80K5 by: STMicroelectronics

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package

Part Details for STU4N80K5 by STMicroelectronics

Overview of STU4N80K5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STU4N80K5

Part # Distributor Description Stock Price Buy
DISTI # 497-14578-5-ND
DigiKey MOSFET N-CH 800V 3A IPAK Min Qty: 1 Lead time: 14 Weeks Container: Tube 2983
In Stock
  • 1 $2.3600
  • 75 $1.0807
  • 150 $0.9741
  • 525 $0.8225
  • 1,050 $0.7568
  • 2,025 $0.7043
  • 5,025 $0.6604
$0.6604 / $2.3600 Buy Now
DISTI # STU4N80K5
Avnet Americas Trans MOSFET N-CH 800V 3A 3-Pin IPAK Tube - Rail/Tube (Alt: STU4N80K5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
  • 3,000 $0.6604
  • 6,000 $0.6443
  • 12,000 $0.6365
  • 18,000 $0.6289
$0.6289 / $0.6604 Buy Now
DISTI # 511-STU4N80K5
Mouser Electronics MOSFETs N-Ch 800V 2.1Ohm typ 3A Zener-protected RoHS: Compliant 2966
  • 1 $1.5700
  • 10 $0.9630
  • 100 $0.8770
  • 250 $0.8760
  • 500 $0.7530
  • 1,000 $0.6610
  • 3,000 $0.6600
$0.6600 / $1.5700 Buy Now
STMicroelectronics N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 2966
  • 1 $1.5400
  • 10 $0.9400
  • 100 $0.8600
  • 250 $0.8600
  • 500 $0.7400
$0.7400 / $1.5400 Buy Now
Future Electronics N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.6550
  • 6,000 $0.6300
$0.6300 / $0.6550 Buy Now
Future Electronics N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.6550
  • 6,000 $0.6300
$0.6300 / $0.6550 Buy Now
Future Electronics N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.7250
  • 300 $0.6950
  • 1,125 $0.6650
  • 2,250 $0.6500
  • 5,625 $0.6200
$0.6200 / $0.7250 Buy Now
Bristol Electronics   300
RFQ
Quest Components   240
  • 1 $2.7840
  • 99 $1.3920
  • 217 $1.2876
$1.2876 / $2.7840 Buy Now
DISTI # STU4N80K5
TME Transistor: N-MOSFET, unipolar, 800V, 3A, Idm: 12A, 60W, IPAK Min Qty: 1 0
  • 1 $1.3800
  • 5 $1.2400
  • 25 $1.0900
  • 140 $0.9800
  • 450 $0.9100
$0.9100 / $1.3800 RFQ
ComSIT USA N-channel 800 V, 2.1 OHM typ., 3 A Mdmesh K5 Power MOSFET Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant Stock EU - 2925
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STU4N80K5
Avnet Silica Trans MOSFET N-CH 800V 3A 3-Pin IPAK Tube (Alt: STU4N80K5) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STU4N80K5
EBV Elektronik Trans MOSFET N-CH 800V 3A 3-Pin IPAK Tube (Alt: STU4N80K5) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STU4N80K5

STU4N80K5 CAD Models

STU4N80K5 Part Data Attributes

STU4N80K5 STMicroelectronics
Buy Now Datasheet
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STU4N80K5 STMicroelectronics N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description IPAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 74.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 12 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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