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N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-14578-5-ND
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DigiKey | MOSFET N-CH 800V 3A IPAK Min Qty: 1 Lead time: 14 Weeks Container: Tube |
2983 In Stock |
|
$0.6604 / $2.3600 | Buy Now |
DISTI #
STU4N80K5
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Avnet Americas | Trans MOSFET N-CH 800V 3A 3-Pin IPAK Tube - Rail/Tube (Alt: STU4N80K5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0 |
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$0.6289 / $0.6604 | Buy Now |
DISTI #
511-STU4N80K5
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Mouser Electronics | MOSFETs N-Ch 800V 2.1Ohm typ 3A Zener-protected RoHS: Compliant | 2966 |
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$0.6600 / $1.5700 | Buy Now |
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STMicroelectronics | N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 | 2966 |
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$0.7400 / $1.5400 | Buy Now |
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Future Electronics | N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0Tube |
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$0.6300 / $0.6550 | Buy Now |
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Future Electronics | N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0Tube |
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$0.6300 / $0.6550 | Buy Now |
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Future Electronics | N-Channel 800 V 2.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.6200 / $0.7250 | Buy Now |
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Bristol Electronics | 300 |
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RFQ | ||
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Quest Components | 240 |
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$1.2876 / $2.7840 | Buy Now | |
DISTI #
STU4N80K5
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TME | Transistor: N-MOSFET, unipolar, 800V, 3A, Idm: 12A, 60W, IPAK Min Qty: 1 | 0 |
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$0.9100 / $1.3800 | RFQ |
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STU4N80K5
STMicroelectronics
Buy Now
Datasheet
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STU4N80K5
STMicroelectronics
N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | IPAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 74.5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |