Datasheets
STU26NM60 by: STMicroelectronics

26A, 600V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN

Part Details for STU26NM60 by STMicroelectronics

Overview of STU26NM60 by STMicroelectronics

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Applications Consumer Electronics Renewable Energy

Part Details for STU26NM60

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STU26NM60 Part Data Attributes:

STU26NM60 STMicroelectronics
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STU26NM60 STMicroelectronics 26A, 600V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description MAX220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 740 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 104 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STU26NM60

This table gives cross-reference parts and alternative options found for STU26NM60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU26NM60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STU26NM60 vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STU26NM60 vs FDP18N50
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors STU26NM60 vs PHD3055L
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics STU26NM60 vs STH8NA60
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STU26NM60 vs STD3NA50T4
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STU26NM60 vs IPP45N06S4L-08
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors STU26NM60 vs 934057024118
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STU26NM60 vs IRF620B
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STU26NM60 vs SPP80N06S2L-06
STP75NF75 N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package STMicroelectronics STU26NM60 vs STP75NF75

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