Part Details for STU26NM50 by STMicroelectronics
Results Overview of STU26NM50 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Renewable Energy
STU26NM50 Information
STU26NM50 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STU26NM50
STU26NM50 CAD Models
STU26NM50 Part Data Attributes
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STU26NM50
STMicroelectronics
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Datasheet
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STU26NM50
STMicroelectronics
26A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | MAX220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 740 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 192 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STU26NM50
This table gives cross-reference parts and alternative options found for STU26NM50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU26NM50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STU26NM50 vs IRFS620 |
| SPA16N50C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | STU26NM50 vs SPA16N50C3 |
| IXFH68N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | STU26NM50 vs IXFH68N20 |
| IRF620B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STU26NM50 vs IRF620B |
| ISL9N312AP3 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | STU26NM50 vs ISL9N312AP3 |
| STW9NB90 | STMicroelectronics | Check for Price | 9.7A, 900V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STU26NM50 vs STW9NB90 |
| STD1NA60T4 | STMicroelectronics | Check for Price | 1.6A, 600V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STU26NM50 vs STD1NA60T4 |
| SPP04N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | STU26NM50 vs SPP04N60C3 |
| 2SK3512-01S | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | STU26NM50 vs 2SK3512-01S |
| FQP5N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STU26NM50 vs FQP5N40 |