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Part Details for STU10NM60N by STMicroelectronics
Overview of STU10NM60N by STMicroelectronics
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for STU10NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
25R9489
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Newark | Mosfet, N Ch, 600V, 10A, To-251, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STU10NM60N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-STU10NM60N-ND
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DigiKey | MOSFET N-CH 600V 10A IPAK Min Qty: 1 Lead time: 16 Weeks Container: Tube |
2990 In Stock |
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$1.3659 / $2.9200 | Buy Now |
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DISTI #
STU10NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU10NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$1.5243 / $1.5899 | Buy Now |
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DISTI #
511-STU10NM60N
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Mouser Electronics | MOSFET N-channel 600 V Mdmesh 8A RoHS: Compliant | 2963 |
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$1.3600 / $2.9200 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 | 2963 |
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$1.3400 / $2.8600 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 100 Container: Tube | 0Tube |
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$1.3400 / $1.4600 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 100 Container: Tube | 0Tube |
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$1.3400 / $1.4600 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 100 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$1.3400 / $1.6000 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$1.3400 | Buy Now |
|
DISTI #
12992226
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Verical | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube Min Qty: 75 Package Multiple: 75 | Americas - 2700 |
|
$0.4227 / $0.4269 | Buy Now |
Part Details for STU10NM60N
STU10NM60N CAD Models
STU10NM60N Part Data Attributes:
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STU10NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STU10NM60N
STMicroelectronics
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-251 | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE ENERGY RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.2 pF | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 47 ns | |
| Turn-on Time-Max (ton) | 22 ns |
Alternate Parts for STU10NM60N
This table gives cross-reference parts and alternative options found for STU10NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU10NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STU7NM60N | N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package | STMicroelectronics | STU10NM60N vs STU7NM60N |