| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
STRH100N6HYG
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Avnet Americas | Rad-Hard N-channel 60 V 40 A Power MOSFET - Bulk (Alt: STRH100N6HYG) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Bulk | 0 |
|
RFQ | ||
|
DISTI #
STRH100N6HYG
|
Avnet Silica | Rad-Hard N-channel 60 V 40 A Power MOSFET (Alt: STRH100N6HYG) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
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|---|---|
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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STMICROELECTRONICS
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Samacsys Manufacturer
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STMicroelectronics
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Additional Feature
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FAST SWITCHING
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Avalanche Energy Rating (Eas)
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954 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
60 V
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Drain Current-Max (ID)
|
40 A
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Drain-source On Resistance-Max
|
0.024 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
470 pF
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JEDEC-95 Code
|
TO-254AA
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JESD-30 Code
|
S-MSFM-P3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
176 W
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Pulsed Drain Current-Max (IDM)
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320 A
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Reference Standard
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EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)
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Surface Mount
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NO
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Terminal Form
|
PIN/PEG
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
|
SILICON
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Turn-off Time-Max (toff)
|
280 ns
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Turn-on Time-Max (ton)
|
300 ns
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