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Transistors / Power Field-Effect Transistors / STP9NB50
Datasheets
STP9NB50 by: STMicroelectronics

8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for STP9NB50 by STMicroelectronics

Results Overview of STP9NB50 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

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STP9NB50 Information

STP9NB50 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP9NB50

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,8.6A I(D),TO-220AB 3
  • 1 $4.0500
  • 3 $2.7000
$2.7000 / $4.0500 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 5
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for STP9NB50

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STP9NB50 Part Data Attributes

Parametric Data
STP9NB50 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP9NB50 STMicroelectronics 8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 520 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.6 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 34.4 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP9NB50

This table gives cross-reference parts and alternative options found for STP9NB50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NB50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SK1009-01 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 7A I(D), 450V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STP9NB50 vs 2SK1009-01
IRF843 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 7A I(D), 450V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP9NB50 vs IRF843
IRF841-010 International Rectifier Check for Price Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STP9NB50 vs IRF841-010
IRF843 Thomson Consumer Electronics Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET STP9NB50 vs IRF843
IRF843 FCI Semiconductor Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET STP9NB50 vs IRF843
IRF843 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STP9NB50 vs IRF843
IRF843 Harris Semiconductor Check for Price Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP9NB50 vs IRF843
IRF842 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STP9NB50 vs IRF842
MTP8N45 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 8A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP9NB50 vs MTP8N45
IRF841 Vishay Siliconix Check for Price Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STP9NB50 vs IRF841
Part Number Manufacturer Composite Price Description Compare
IRF744 International Rectifier Check for Price Power Field-Effect Transistor, 8.8A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP9NB50 vs IRF744
MTP8N45 Motorola Mobility LLC Check for Price 8A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB STP9NB50 vs MTP8N45
BUK657-500B NXP Semiconductors Check for Price TRANSISTOR 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220AB, TO-220AB, 3 PIN, FET General Purpose Power STP9NB50 vs BUK657-500B
IRF842 Rochester Electronics LLC Check for Price 7A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB STP9NB50 vs IRF842
2SK1503-01 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP9NB50 vs 2SK1503-01
IRF841 Motorola Mobility LLC Check for Price 8A, 450V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB STP9NB50 vs IRF841
IRF841 Intersil Corporation Check for Price TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-220AB STP9NB50 vs IRF841
IRF840-001 International Rectifier Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STP9NB50 vs IRF840-001
IRF843-001 International Rectifier Check for Price Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STP9NB50 vs IRF843-001
IRF841 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STP9NB50 vs IRF841

STP9NB50 Related Parts

STP9NB50 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP9NB50 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and minimizing thermal resistance.

  • The recommended gate drive voltage for the STP9NB50 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STP9NB50, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage from voltage and current surges.

  • The maximum allowed dv/dt for the STP9NB50 is 10kV/μs, which is the maximum rate of change of voltage that the device can withstand without damage.