Part Details for STP8NM60N by STMicroelectronics
Results Overview of STP8NM60N by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STP8NM60N Information
STP8NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP8NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 40 |
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$2.7800 / $4.1700 | Buy Now | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for STP8NM60N
STP8NM60N CAD Models
STP8NM60N Part Data Attributes
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STP8NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP8NM60N
STMicroelectronics
7A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP8NM60N
This table gives cross-reference parts and alternative options found for STP8NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP8NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP8NM60ND | STMicroelectronics | Check for Price | 7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP8NM60N vs STP8NM60ND |
STP8NM60N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP8NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
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To ensure the STP8NM60N is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a suitable resistor and capacitor network, and ensuring the drain-source voltage is within the recommended range. Additionally, consider the device's threshold voltage, gate-source voltage, and drain-source current ratings when designing the bias circuit.
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For optimal thermal performance, it's recommended to use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, consider using a thermal pad or thermal vias to improve heat dissipation.
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To protect the STP8NM60N from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-protected package. In the circuit design, consider adding ESD protection devices such as TVS diodes or ESD protection arrays to prevent voltage transients from damaging the device.
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The recommended gate drive circuit for the STP8NM60N depends on the specific application requirements. A general-purpose gate drive circuit can be designed using a gate driver IC, such as the STMicroelectronics L638x series, along with a suitable resistor and capacitor network. The gate drive circuit should be designed to provide a fast rise and fall time, while also ensuring the gate-source voltage is within the recommended range.