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Transistors / Power Field-Effect Transistors / STP8N80K5
Datasheets
STP8N80K5 by: STMicroelectronics

N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package

Part Details for STP8N80K5 by STMicroelectronics

Results Overview of STP8N80K5 by STMicroelectronics

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

STP8N80K5 Information

STP8N80K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP8N80K5

Part # Distributor Description Stock Price Buy
DISTI # 2807307
Farnell MOSFET, N-CH, 800V, 6A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each 187
  • 1 $2.4501
  • 10 $1.3223
  • 100 $1.2963
  • 500 $1.2730
  • 1,000 $1.2484
$1.2484 / $2.4501 Buy Now
DISTI # 497-13655-5-ND
DigiKey MOSFET N CH 800V 6A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 1000
In Stock
  • 1 $2.4400
  • 50 $1.2138
  • 100 $1.1832
  • 500 $1.1386
  • 1,000 $1.0839
  • 2,000 $1.0103
  • 5,000 $1.0008
$1.0008 / $2.4400 Buy Now
DISTI # STP8N80K5
Avnet Americas Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP8N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.0134
  • 2,000 $1.0070
  • 4,000 $0.9884
  • 6,000 $0.9704
  • 8,000 $0.9531
$0.9531 / $1.0134 Buy Now
DISTI # 511-STP8N80K5
Mouser Electronics MOSFETs N-Ch 800V 0.76 Ohm 6 A MDmesh K5 RoHS: Compliant 984
  • 1 $2.3900
  • 10 $1.1900
  • 100 $1.1400
  • 500 $1.0800
  • 1,000 $1.0700
  • 2,000 $1.0100
  • 5,000 $1.0000
$1.0000 / $2.3900 Buy Now
STMicroelectronics N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 984
  • 1 $2.3400
  • 10 $1.1700
  • 100 $1.1200
  • 250 $1.1200
  • 500 $1.0600
$1.0600 / $2.3400 Buy Now
Future Electronics N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH™ 5 Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube 0
Tube
  • 50 $1.0700
  • 200 $1.0500
  • 750 $1.0400
  • 1,250 $1.0300
  • 2,500 $1.0100
$1.0100 / $1.0700 Buy Now
Future Electronics N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH™ 5 Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube 0
Tube
  • 50 $1.0700
  • 200 $1.0500
  • 750 $1.0400
  • 1,250 $1.0300
  • 2,500 $1.0100
$1.0100 / $1.0700 Buy Now
Bristol Electronics   40
RFQ
Quest Components   32
  • 1 $1.5050
  • 4 $1.2040
  • 18 $0.9030
$0.9030 / $1.5050 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 30
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STP8N80K5
Avnet Silica Trans MOSFET NCH 800V 6A 3Pin3Tab TO220 Tube (Alt: STP8N80K5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 3000
Buy Now
DISTI # STP8N80K5
EBV Elektronik Trans MOSFET NCH 800V 6A 3Pin3Tab TO220 Tube (Alt: STP8N80K5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP8N80K5

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STP8N80K5 Part Data Attributes

Parametric Data
STP8N80K5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP8N80K5 STMicroelectronics N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220 package
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 114 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 24 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STP8N80K5 Related Parts

STP8N80K5 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STP8N80K5 is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.

  • To ensure reliability in high-temperature applications, it is recommended to derate the voltage and current ratings according to the temperature derating curve provided in the datasheet, and to ensure proper thermal management and heat sinking.

  • The recommended gate resistor value for the STP8N80K5 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the STP8N80K5 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent shoot-through currents.

  • The maximum allowed voltage overshoot on the STP8N80K5 is 10% of the maximum voltage rating, but it is recommended to minimize voltage overshoots to prevent device damage.