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N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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STMicroelectronics | N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK RoHS: Compliant Min Qty: 1 | 0 |
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$0.9300 / $1.6700 | Buy Now |
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Future Electronics | N-Channel 30 V 0.005 Ω Flange Mount STripFET™ V Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.0300 / $1.1800 | Buy Now |
DISTI #
STP85N3LH5
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Avnet Silica | Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube (Alt: STP85N3LH5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 7 Weeks, 4 Days | Silica - 0 |
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Buy Now | |
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Chip1Cloud | MOSFET N-CH 30V 80A TO-220 | 59600 |
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RFQ | |
DISTI #
1752172
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.3142 / $0.6902 | Buy Now |
DISTI #
1752172
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Farnell | MOSFET, N CH, 30V, 80A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 0 Days Container: Each | 0 |
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$0.8515 / $0.9678 | Buy Now |
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STP85N3LH5
STMicroelectronics
Buy Now
Datasheet
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STP85N3LH5
STMicroelectronics
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 165 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0071 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP85N3LH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP85N3LH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934057030118 | TRANSISTOR 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | STP85N3LH5 vs 934057030118 |
ISL9N307AS3STS62Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STP85N3LH5 vs ISL9N307AS3STS62Z |
IRL2203NHR | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | STP85N3LH5 vs IRL2203NHR |
FDB6670ALS62Z | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STP85N3LH5 vs FDB6670ALS62Z |
ISL9N307AS3STL99Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STP85N3LH5 vs ISL9N307AS3STL99Z |
STD95N3LLH6 | 80A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | STP85N3LH5 vs STD95N3LLH6 |
FDB7030LL99Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STP85N3LH5 vs FDB7030LL99Z |
STB95NF03 | 80A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | STP85N3LH5 vs STB95NF03 |
GFP75N03/45B | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Semiconductors | STP85N3LH5 vs GFP75N03/45B |
FDB7030LL86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STP85N3LH5 vs FDB7030LL86Z |