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N-CHANNEL 60V 0.0065 Ohm 80A TO-220 STripFET™ II POWER MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33R1289
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Newark | Mosfet Transistor, N Channel, 40 A, 60 V, 6.5 Mohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP80NF06 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2.0300 | Buy Now |
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STMicroelectronics | N-CHANNEL 60V 0.0065 Ohm 80A TO-220 STripFET™, II POWER MOSFET RoHS: Compliant Min Qty: 1 | 0 |
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$2.1700 / $3.4400 | Buy Now |
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Future Electronics | N-Channel 60 V 0.008 Ohm Flange Mount STripFET II™ Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 600Tube |
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$1.5500 / $1.7100 | Buy Now |
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Future Electronics | N-Channel 60 V 0.008 Ohm Flange Mount STripFET II™ Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 202Tube |
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$1.2000 / $1.3800 | Buy Now |
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Bristol Electronics | 370 |
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RFQ | ||
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Bristol Electronics | 650 |
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RFQ | ||
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Quest Components | 80 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 6340 |
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$0.9450 / $2.2500 | Buy Now |
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Quest Components | 80 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 520 |
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$1.4850 / $3.6000 | Buy Now |
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STP80NF06
STMicroelectronics
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Datasheet
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STP80NF06
STMicroelectronics
N-CHANNEL 60V 0.0065 Ohm 80A TO-220 STripFET™ II POWER MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | LOW THRESHOLD | |
Avalanche Energy Rating (Eas) | 870 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP80NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP80NF06 vs IRF610B_FP001 |
FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP80NF06 vs FDP18N50 |
PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | STP80NF06 vs PHD3055L |
STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | STP80NF06 vs STH8NA60 |
STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STP80NF06 vs STD3NA50T4 |
IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP80NF06 vs IPP45N06S4L-08 |
934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | STP80NF06 vs 934057024118 |
IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP80NF06 vs IRF620B |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP80NF06 vs SPP80N06S2L-06 |
STP75NF75 | N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package | STMicroelectronics | STP80NF06 vs STP75NF75 |