Part Details for STP80NE06-10 by STMicroelectronics
Results Overview of STP80NE06-10 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STP80NE06-10 Information
STP80NE06-10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP80NE06-10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 24 |
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RFQ | ||
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Quest Components | 80 A, 60 V, 0.01 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 59 |
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$1.2000 / $1.5000 | Buy Now |
Part Details for STP80NE06-10
STP80NE06-10 CAD Models
STP80NE06-10 Part Data Attributes
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STP80NE06-10
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP80NE06-10
STMicroelectronics
80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP80NE06-10
This table gives cross-reference parts and alternative options found for STP80NE06-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NE06-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQP70N10 | Fairchild Semiconductor Corporation | Check for Price | N-Channel QFET® MOSFET 100V, 57A, 23mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL | STP80NE06-10 vs FQP70N10 |
| HUFA75345P3 | Intersil Corporation | Check for Price | 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | STP80NE06-10 vs HUFA75345P3 |
| NTP35N15 | onsemi | Check for Price | 37A, 150V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, TO-220, 3 PIN | STP80NE06-10 vs NTP35N15 |
| IRF3205PBF | Infineon Technologies AG | $0.6869 | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | STP80NE06-10 vs IRF3205PBF |
| HUF75339P3 | Fairchild Semiconductor Corporation | Check for Price | N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL | STP80NE06-10 vs HUF75339P3 |
| HUF75344P3 | Intersil Corporation | Check for Price | 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | STP80NE06-10 vs HUF75344P3 |
| NTP35N15G | onsemi | Check for Price | 150 V, 37 A, 50 mOhm Single N-Channel Power MOSFET, TO-220, TO-220 3 LEAD STANDARD, 50-TUBE | STP80NE06-10 vs NTP35N15G |
| HUF75343P3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 0.009ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | STP80NE06-10 vs HUF75343P3 |
| HUF75345P3 | onsemi | $1.8812 | N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ, TO-220-3, 800-TUBE | STP80NE06-10 vs HUF75345P3 |
| FQP70N10 | onsemi | $1.1535 | Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220, TO-220-3, 1000-TUBE | STP80NE06-10 vs FQP70N10 |
STP80NE06-10 Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Use a heat sink or thermal interface material to maintain a safe junction temperature.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
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Yes, the STP80NE06-10 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly snubbed and the PCB layout is optimized for high-frequency operation.
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Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Ensure that the PCB has ESD protection components, such as TVS diodes or ESD protection arrays.