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Transistors / Power Field-Effect Transistors / STP80N10F7
Datasheets
STP80N10F7 by: STMicroelectronics

N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

Part Details for STP80N10F7 by STMicroelectronics

Results Overview of STP80N10F7 by STMicroelectronics

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STP80N10F7 Information

STP80N10F7 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP80N10F7

Part # Distributor Description Stock Price Buy
DISTI # 2807222
Farnell MOSFET, N-CH, 100V, 80A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 39 Weeks, 1 Days Container: Each 1160
  • 1 $1.6925
  • 10 $1.4489
  • 100 $1.2322
  • 500 $1.1501
  • 1,000 $0.9283
$0.9283 / $1.6925 Buy Now
STMicroelectronics N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 648
  • 1 $2.2300
  • 10 $2.0100
  • 25 $1.8900
  • 100 $1.6200
  • 250 $1.6200
  • 500 $1.3200
$1.3200 / $2.2300 Buy Now
DISTI # STP80N10F7
Avnet Silica Trans MOSFET NCH 100V 80A 3Pin TO220 Tube (Alt: STP80N10F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STP80N10F7
EBV Elektronik Trans MOSFET NCH 100V 80A 3Pin TO220 Tube (Alt: STP80N10F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP80N10F7

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STP80N10F7 Part Data Attributes

Parametric Data
STP80N10F7 STMicroelectronics
Buy Now Datasheet
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STP80N10F7 STMicroelectronics N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA LOW-ON RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 320 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STP80N10F7 Related Parts

STP80N10F7 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP80N10F7 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.

  • The recommended gate drive voltage for the STP80N10F7 is between 10V and 15V, with a maximum voltage of 20V.

  • To protect the STP80N10F7 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.

  • The maximum allowed current for the STP80N10F7 is 80A, with a maximum pulsed current of 160A.