Datasheets
STP7NB40 by: STMicroelectronics

7A, 400V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for STP7NB40 by STMicroelectronics

Overview of STP7NB40 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STP7NB40

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 1223
  • 3 $1.8900
  • 12 $1.4175
  • 37 $1.1812
  • 128 $0.7087
  • 425 $0.6615
  • 1,135 $0.6237
$0.6237 / $1.8900 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 400V, 0.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 978
  • 1 $2.5200
  • 341 $0.8190
  • 734 $0.7875
$0.7875 / $2.5200 Buy Now
Chip1Cloud N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET 6000
RFQ
DISTI # 498087
Farnell MOSFET, N TO-220 RoHS: Not Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each 0
  • 1 $2.0075
  • 25 $1.4429
  • 100 $0.9912
  • 250 $0.7277
  • 1,000 $0.6399
$0.6399 / $2.0075 Buy Now

Part Details for STP7NB40

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STP7NB40 Part Data Attributes:

STP7NB40 STMicroelectronics
Buy Now Datasheet
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STP7NB40 STMicroelectronics 7A, 400V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP7NB40

This table gives cross-reference parts and alternative options found for STP7NB40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP7NB40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ60 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited STP7NB40 vs BUZ60
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited STP7NB40 vs IRF730
BUZ60 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics STP7NB40 vs BUZ60
BUZ205 Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens STP7NB40 vs BUZ205
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 Microsemi Corporation STP7NB40 vs IRF730
MTP5N40E 5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi STP7NB40 vs MTP5N40E
BUK455-400B TRANSISTOR 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors STP7NB40 vs BUK455-400B
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC STP7NB40 vs IRF730
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation STP7NB40 vs IRF730
BUZ60 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors STP7NB40 vs BUZ60
Part Number Description Manufacturer Compare
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC STP7NB40 vs IRF730
MTP5N35 5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC STP7NB40 vs MTP5N35
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited STP7NB40 vs IRF730
IRF730 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics STP7NB40 vs IRF730
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation STP7NB40 vs IRF730
IRF730PBF Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier STP7NB40 vs IRF730PBF
BUZ60 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG STP7NB40 vs BUZ60
IRF730 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 Microsemi Corporation STP7NB40 vs IRF730
BUK455-400B TRANSISTOR 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors STP7NB40 vs BUK455-400B
MTP5N40E 5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC STP7NB40 vs MTP5N40E

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