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Transistors Power Field-Effect Transistors STP60N55F3

Transistors
STP60N55F3
STMicroelectronics
Description: 80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Overview of STP60N55F3 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP60N55F3 by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   Min Qty: 2 20
  • 2 $2.7000
  • 9 $2.0250
$2.0250 / $2.7000 Buy Now
Bristol Electronics   742
RFQ
Quest Components 80 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 16
  • 1 $3.6000
  • 2 $2.7000
  • 10 $2.2500
$2.2500 / $3.6000 Buy Now
Quest Components 80 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 593
  • 1 $3.7880
  • 159 $1.7520
  • 343 $1.5626
$1.5626 / $3.7880 Buy Now

CAD Models for STP60N55F3 by STMicroelectronics
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Part Data Attributes for STP60N55F3 by STMicroelectronics
Parametric Data

STP60N55F3
STMicroelectronics
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
390 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
80 A
Drain-source On Resistance-Max
0.0085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
110 W
Pulsed Drain Current-Max (IDM)
320 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. STP60N55F3
    STMicroelectronics
    80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
    VS

Alternate Parts for STP60N55F3

This table gives cross-reference parts and alternative options found for STP60N55F3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP60N55F3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUK96608-55A TRANSISTOR 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors STP60N55F3 vs BUK96608-55A
NP80N06NLG-S18-AY Power MOSFETs for Automotive, MP-25SK, /Tube Renesas Electronics Corporation STP60N55F3 vs NP80N06NLG-S18-AY
FS70VSJ-06-T1 Power Field-Effect Transistor, 70A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric STP60N55F3 vs FS70VSJ-06-T1
IPB080N06NGATMA1 Power Field-Effect Transistor, 80A I(D), 60V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG STP60N55F3 vs IPB080N06NGATMA1
IRF1010EZS Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG STP60N55F3 vs IRF1010EZS
FS70VS-06-T2 Power Field-Effect Transistor, 70A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN Mitsubishi Electric STP60N55F3 vs FS70VS-06-T2
IPB80N06S3L-08 Power Field-Effect Transistor, 80A I(D), 55V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP60N55F3 vs IPB80N06S3L-08
FS70VSH-06-T2 Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN Mitsubishi Electric STP60N55F3 vs FS70VSH-06-T2
IPB80N06S3L08ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP60N55F3 vs IPB80N06S3L08ATMA1
IPB80N06S3L-05 Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP60N55F3 vs IPB80N06S3L-05

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