Part Details for STP60N05-14 by STMicroelectronics
Results Overview of STP60N05-14 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STP60N05-14 Information
STP60N05-14 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP60N05-14
STP60N05-14 CAD Models
STP60N05-14 Part Data Attributes
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STP60N05-14
STMicroelectronics
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Datasheet
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STP60N05-14
STMicroelectronics
60A, 50V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 320 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Max (ton) | 300 ns |
Alternate Parts for STP60N05-14
This table gives cross-reference parts and alternative options found for STP60N05-14. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP60N05-14, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP60N05-14 vs IPB80N06S2LH5ATMA1 |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP60N05-14 vs NDB706AL |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP60N05-14 vs NDB606BEL |
| STD4NB25T4 | STMicroelectronics | Check for Price | 4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STP60N05-14 vs STD4NB25T4 |
| SPP47N10 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | STP60N05-14 vs SPP47N10 |
| FQA48N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP60N05-14 vs FQA48N20 |
| STP13NK50Z | STMicroelectronics | Check for Price | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP60N05-14 vs STP13NK50Z |
| IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | STP60N05-14 vs IXFH7N90Q |
| IXFH14N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | STP60N05-14 vs IXFH14N80 |
| IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP60N05-14 vs IRFS730B |