Part Details for STP5NK65ZFP by STMicroelectronics
Results Overview of STP5NK65ZFP by STMicroelectronics
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STP5NK65ZFP Information
STP5NK65ZFP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP5NK65ZFP
STP5NK65ZFP CAD Models
STP5NK65ZFP Part Data Attributes
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STP5NK65ZFP
STMicroelectronics
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Datasheet
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STP5NK65ZFP
STMicroelectronics
4.5A, 650V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220FP, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 1.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
STP5NK65ZFP Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STP5NK65ZFP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum voltage, current, and power dissipation ratings, as well as its thermal impedance and junction temperature.
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To ensure the STP5NK65ZFP is properly biased for optimal performance, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Additionally, consider the device's threshold voltage (Vth) and ensure the gate drive voltage is sufficient to fully enhance the device. A gate driver circuit may be necessary to provide a high-current, low-impedance drive signal.
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For optimal thermal performance, use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This can be achieved by using a large copper area for the drain pad, placing the device near a heat sink or thermal pad, and using thermal vias to dissipate heat. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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To protect the STP5NK65ZFP from electrostatic discharge (ESD) and overvoltage, follow proper handling and storage procedures, such as using an ESD wrist strap or mat, and storing the device in an anti-static package. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design to protect the device from voltage transients and ESD events.
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The reliability and lifetime expectations for the STP5NK65ZFP are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. STMicroelectronics provides reliability data and lifetime estimates in the datasheet, but it's essential to consider the specific application and operating conditions to ensure the device meets the required reliability and lifetime expectations.