Datasheets
STP5NK65ZFP by: STMicroelectronics

4.5A, 650V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN

Part Details for STP5NK65ZFP by STMicroelectronics

Results Overview of STP5NK65ZFP by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STP5NK65ZFP Information

STP5NK65ZFP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for STP5NK65ZFP

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STP5NK65ZFP Part Data Attributes

STP5NK65ZFP STMicroelectronics
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STP5NK65ZFP STMicroelectronics 4.5A, 650V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220FP, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 170 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

STP5NK65ZFP Related Parts

STP5NK65ZFP Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STP5NK65ZFP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum voltage, current, and power dissipation ratings, as well as its thermal impedance and junction temperature.

  • To ensure the STP5NK65ZFP is properly biased for optimal performance, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Additionally, consider the device's threshold voltage (Vth) and ensure the gate drive voltage is sufficient to fully enhance the device. A gate driver circuit may be necessary to provide a high-current, low-impedance drive signal.

  • For optimal thermal performance, use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This can be achieved by using a large copper area for the drain pad, placing the device near a heat sink or thermal pad, and using thermal vias to dissipate heat. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.

  • To protect the STP5NK65ZFP from electrostatic discharge (ESD) and overvoltage, follow proper handling and storage procedures, such as using an ESD wrist strap or mat, and storing the device in an anti-static package. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design to protect the device from voltage transients and ESD events.

  • The reliability and lifetime expectations for the STP5NK65ZFP are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. STMicroelectronics provides reliability data and lifetime estimates in the datasheet, but it's essential to consider the specific application and operating conditions to ensure the device meets the required reliability and lifetime expectations.