Part Details for STP5N62K3 by STMicroelectronics
Results Overview of STP5N62K3 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP5N62K3 Information
STP5N62K3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP5N62K3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 497 |
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RFQ | ||
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Quest Components | 397 |
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$1.4256 / $3.4560 | Buy Now |
Part Details for STP5N62K3
STP5N62K3 CAD Models
STP5N62K3 Part Data Attributes
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STP5N62K3
STMicroelectronics
Buy Now
Datasheet
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STP5N62K3
STMicroelectronics
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220 package
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA LOW-ON RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 620 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 16.8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP5N62K3
This table gives cross-reference parts and alternative options found for STP5N62K3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP5N62K3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STU5N62K3 | STMicroelectronics | Check for Price | N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package | STP5N62K3 vs STU5N62K3 |
| STP4NM60 | STMicroelectronics | Check for Price | 4A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP5N62K3 vs STP4NM60 |
STP5N62K3 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP5N62K3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
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To ensure the STP5N62K3 is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a suitable resistor, and ensuring the drain-source voltage is within the recommended range. Additionally, consider using a gate driver or voltage regulator to provide a stable and regulated voltage supply.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can include using a thermal pad or heat sink, and ensuring good airflow around the device. Additionally, consider using thermal vias and thermal layers in the PCB to help dissipate heat. The datasheet may provide specific guidelines or recommendations for PCB layout and thermal management.
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To protect the STP5N62K3 from electrostatic discharge (ESD), follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials, and avoiding direct contact with the device's pins. Additionally, consider using ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
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The reliability and lifetime expectations of the STP5N62K3 are typically dependent on various factors such as operating conditions, environmental factors, and manufacturing quality. The datasheet may provide some information on the device's reliability and lifetime, but it's recommended to consult with STMicroelectronics or a qualified reliability engineer for more detailed information and guidance.