Part Details for STP40N20 by STMicroelectronics
Results Overview of STP40N20 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STP40N20 Information
STP40N20 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP40N20
STP40N20 CAD Models
STP40N20 Part Data Attributes
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STP40N20
STMicroelectronics
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Datasheet
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STP40N20
STMicroelectronics
40A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP40N20
This table gives cross-reference parts and alternative options found for STP40N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP40N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP40N20 vs IPB80N06S2LH5ATMA1 |
| STD3NA50T4 | STMicroelectronics | Check for Price | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STP40N20 vs STD3NA50T4 |
| 934057024118 | NXP Semiconductors | Check for Price | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | STP40N20 vs 934057024118 |
| STH8NA60 | STMicroelectronics | Check for Price | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STP40N20 vs STH8NA60 |
| STP7NE10 | STMicroelectronics | Check for Price | 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP40N20 vs STP7NE10 |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STP40N20 vs STD65N6F3 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP40N20 vs FDP6035L |
| NDB705BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP40N20 vs NDB705BEL |
| STD5NE10T4 | STMicroelectronics | Check for Price | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STP40N20 vs STD5NE10T4 |
| NDB705BE | Texas Instruments | Check for Price | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP40N20 vs NDB705BE |
STP40N20 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STP40N20 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
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To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is minimized (typically <10 ohms). Also, use a gate driver with a high current capability (>1A) and a fast rise/fall time (<10ns) to quickly charge/discharge the gate capacitance.
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For optimal thermal performance, use a PCB with a thick copper layer (>1 oz) and a large thermal pad (>1 cm^2) connected to the drain pin. Ensure good thermal conduction by using thermal vias and a thermal interface material (TIM) between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
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Use a voltage clamp or a zener diode to limit the voltage across the device to its maximum rating (40V). Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consider using a fuse or a PTC resettable fuse for added protection.
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The STP40N20 has a typical lifespan of 10-15 years in a typical application, assuming proper thermal management and operation within the recommended specifications. The device's reliability is influenced by factors such as junction temperature, voltage stress, and current density. Follow the recommended derating guidelines and ensure proper thermal management to maximize the device's lifespan.