Datasheets
STP36N55M5 by: STMicroelectronics

N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package

Part Details for STP36N55M5 by STMicroelectronics

Overview of STP36N55M5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP36N55M5

Part # Distributor Description Stock Price Buy
DISTI # 45AC7719
Newark Mosfet, N-Ch, 550V, 33A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:550V, Continuous Drain Current Id:33A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP36N55M5 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 189
  • 1 $1.1000
  • 10 $1.1000
  • 25 $1.1000
  • 50 $1.1000
  • 100 $1.1000
  • 250 $1.1000
  • 500 $1.1000
$1.1000 Buy Now
DISTI # 497-13275-5-ND
DigiKey MOSFET N-CH 550V 33A TO220 Min Qty: 1 Lead time: 17 Weeks Container: Tube 25
In Stock
  • 1 $7.3000
$7.3000 Buy Now
DISTI # V79:2366_17793300
Arrow Electronics Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1620 Americas - 5614
  • 1 $3.4550
$3.4550 Buy Now
DISTI # V36:1790_06564707
Arrow Electronics Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1620 Americas - 40
  • 1 $2.1880
$2.1880 Buy Now

Part Details for STP36N55M5

STP36N55M5 CAD Models

STP36N55M5 Part Data Attributes:

STP36N55M5 STMicroelectronics
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STP36N55M5 STMicroelectronics N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 550 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 132 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP36N55M5

This table gives cross-reference parts and alternative options found for STP36N55M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP36N55M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPT60R080G7 Power Field-Effect Transistor, Infineon Technologies AG STP36N55M5 vs IPT60R080G7
TK31E60X Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V Toshiba America Electronic Components STP36N55M5 vs TK31E60X

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