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N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7719
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Newark | Mosfet, N-Ch, 550V, 33A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:550V, Continuous Drain Current Id:33A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP36N55M5 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 189 |
|
$1.1000 | Buy Now |
DISTI #
497-13275-5-ND
|
DigiKey | MOSFET N-CH 550V 33A TO220 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
25 In Stock |
|
$7.3000 | Buy Now |
DISTI #
V79:2366_17793300
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Arrow Electronics | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1620 | Americas - 5614 |
|
$3.4550 | Buy Now |
DISTI #
V36:1790_06564707
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Arrow Electronics | Trans MOSFET N-CH Si 550V 33A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1620 | Americas - 40 |
|
$2.1880 | Buy Now |
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STP36N55M5
STMicroelectronics
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Datasheet
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STP36N55M5
STMicroelectronics
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 550 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 132 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP36N55M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP36N55M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPT60R080G7 | Power Field-Effect Transistor, | Infineon Technologies AG | STP36N55M5 vs IPT60R080G7 |
TK31E60X | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STP36N55M5 vs TK31E60X |