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Part Details for STP34NM60N by STMicroelectronics
Results Overview of STP34NM60N by STMicroelectronics
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP34NM60N Information
STP34NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP34NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2098317
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Farnell | MOSFET, N CH, 600V, 29A, TO 220 RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each | 485 |
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$5.0879 / $10.0228 | Buy Now |
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DISTI #
497-10884-5-ND
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DigiKey | MOSFET N-CH 600V 29A TO220-3 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
266 In Stock |
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$5.0200 / $10.3100 | Buy Now |
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DISTI #
STP34NM60N
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Avnet Americas | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP34NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$4.7809 / $5.0835 | Buy Now |
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DISTI #
511-STP34NM60N
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Mouser Electronics | MOSFETs N-Ch 600V 0.092 Ohm MDmesh II 29A Switch RoHS: Compliant | 883 |
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$5.0200 / $10.1100 | Buy Now |
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DISTI #
E02:0323_03155868
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Arrow Electronics | Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2332 | Europe - 498 |
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$2.5433 / $2.9710 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 883 |
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$5.3000 / $9.9100 | Buy Now |
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DISTI #
76492181
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Verical | Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 3 Package Multiple: 1 Date Code: 2332 | Americas - 498 |
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$2.5173 / $2.9407 | Buy Now |
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Quest Components | 215 |
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$6.4944 / $11.8080 | Buy Now | |
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Quest Components | 16 |
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$7.8720 / $11.8080 | Buy Now | |
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DISTI #
STP34NM60N
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TME | Transistor: N-MOSFET, MDmesh™ ||, unipolar, 600V, 20A, 250W Min Qty: 1 | 81 |
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$4.0500 / $8.6500 | Buy Now |
Part Details for STP34NM60N
STP34NM60N CAD Models
STP34NM60N Part Data Attributes
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STP34NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP34NM60N
STMicroelectronics
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 345 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 210 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STP34NM60N Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP34NM60N is -40°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 60V.
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The recommended gate resistor value for the STP34NM60N is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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To protect the STP34NM60N from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors.
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The maximum allowable power dissipation for the STP34NM60N is 150W, but this can be increased with proper heat sinking and thermal management.