Part Details for STP30N20 by STMicroelectronics
Results Overview of STP30N20 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STP30N20 Information
STP30N20 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STP30N20
STP30N20 CAD Models
STP30N20 Part Data Attributes
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STP30N20
STMicroelectronics
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Datasheet
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STP30N20
STMicroelectronics
30A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP30N20
This table gives cross-reference parts and alternative options found for STP30N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP30N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| SFF250Z-1 | Solid State Devices Inc (SSDI) | Check for Price | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN | STP30N20 vs SFF250Z-1 |
| STP30NF20 | STMicroelectronics | $1.6590 | N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET | STP30N20 vs STP30NF20 |
| STB30NF20L | STMicroelectronics | $1.9170 | N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET | STP30N20 vs STB30NF20L |
STP30N20 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP30N20 is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure proper biasing, make sure to connect the gate to a voltage source that is at least 10V higher than the drain voltage, and the source pin should be connected to a low-impedance ground plane.
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To minimize thermal resistance, use a large copper area for the drain pad, and ensure good thermal conduction to the heat sink or PCB ground plane. A thermal via or thermal pad under the drain pad can also help to reduce thermal resistance.
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Yes, the STP30N20 can be used in switching applications, but it's essential to ensure that the switching frequency is limited to below 100 kHz to avoid excessive power losses. Additionally, the device should be operated within the safe operating area (SOA) to prevent damage.
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To protect the STP30N20 from ESD, use ESD-sensitive handling procedures, and ensure that the device is stored in an ESD-protected environment. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays on the PCB.