Part Details for STP21NM60N by STMicroelectronics
Results Overview of STP21NM60N by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
STP21NM60N Information
STP21NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP21NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 49 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 600V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 20 |
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$2.8800 / $5.7600 | Buy Now |
Part Details for STP21NM60N
STP21NM60N CAD Models
STP21NM60N Part Data Attributes
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STP21NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP21NM60N
STMicroelectronics
17A, 600V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 610 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP21NM60N
This table gives cross-reference parts and alternative options found for STP21NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP21NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP28N60DM2 | STMicroelectronics | $2.9930 | N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package | STP21NM60N vs STP28N60DM2 |
| STP22NM60N | STMicroelectronics | $1.4941 | N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220 | STP21NM60N vs STP22NM60N |
| STP15NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package | STP21NM60N vs STP15NM60ND |
| STP15NM60N | STMicroelectronics | Check for Price | 14A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STP21NM60N vs STP15NM60N |
| STP26N60DM6 | STMicroelectronics | $3.0649 | N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package | STP21NM60N vs STP26N60DM6 |
| STP22N60DM6 | STMicroelectronics | Check for Price | N-channel 600 V, 200 mOhm typ., 15 A MDmesh DM6 Power MOSFET in a TO-220 package | STP21NM60N vs STP22N60DM6 |
| STP21NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package | STP21NM60N vs STP21NM60ND |
| STB21NM60N-1 | STMicroelectronics | Check for Price | 17A, 600V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STP21NM60N vs STB21NM60N-1 |
STP21NM60N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP21NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
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To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently.
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The recommended gate drive voltage for the STP21NM60N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses, but it may also increase the risk of gate oxide breakdown.
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Yes, the STP21NM60N is a qualified device for high-reliability and automotive applications. It meets the requirements of the AEC-Q101 standard, which ensures that the device can operate reliably in harsh environments.
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To protect the STP21NM60N from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe materials, such as ESD-safe workbenches and wrist straps, and ensuring that the device is properly grounded during handling and assembly.