-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™ POWER MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP20NM60 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
01X0055
|
Newark | Power Mosfet, N Channel, 20 A, 600 V, 290 Mohm, 30 V, 4 V Rohs Compliant: Yes |Stmicroelectronics ST... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2454 |
|
$3.5500 / $6.1500 | Buy Now |
DISTI #
497-3184-5-ND
|
DigiKey | MOSFET N-CH 600V 20A TO220AB Min Qty: 1 Lead time: 14 Weeks Container: Tube |
1148 In Stock |
|
$2.8723 / $5.7500 | Buy Now |
DISTI #
STP20NM60
|
Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP20NM60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$2.7355 / $2.9086 | Buy Now |
DISTI #
511-STP20NM60
|
Mouser Electronics | MOSFETs N-Ch 600 Volt 20 Amp RoHS: Compliant | 377 |
|
$2.8700 / $5.3400 | Buy Now |
DISTI #
V99:2348_18461784
|
Arrow Electronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2309 | Americas - 2711 |
|
$3.0960 | Buy Now |
|
STMicroelectronics | N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™, POWER MOSFET RoHS: Compliant Min Qty: 1 | 377 |
|
$2.8400 / $5.2300 | Buy Now |
DISTI #
66774147
|
Verical | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 2 Package Multiple: 1 Date Code: 2309 | Americas - 2711 |
|
$3.0960 | Buy Now |
|
Bristol Electronics | 27 |
|
RFQ | ||
|
Bristol Electronics | 2 |
|
RFQ | ||
|
Quest Components | 20 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 21 |
|
$8.6100 / $12.9150 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STP20NM60
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP20NM60
STMicroelectronics
N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™ POWER MOSFET
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 650 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 192 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP20NM60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NM60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP20NM60 vs IPB80N06S2LH5ATMA1 |
NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP20NM60 vs NDB706AL |
NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP20NM60 vs NDB606BEL |
STD4NB25T4 | STMicroelectronics | Check for Price | 4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STP20NM60 vs STD4NB25T4 |
SPP47N10 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | STP20NM60 vs SPP47N10 |
FQA48N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP20NM60 vs FQA48N20 |
STP13NK50Z | STMicroelectronics | Check for Price | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP20NM60 vs STP13NK50Z |
IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | STP20NM60 vs IXFH7N90Q |
IXFH14N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | STP20NM60 vs IXFH14N80 |
IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP20NM60 vs IRFS730B |
The maximum operating temperature of the STP20NM60 is 150°C, as specified in the datasheet.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
The maximum current rating of the STP20NM60 is 20A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
To protect the STP20NM60 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
The recommended gate drive voltage for the STP20NM60 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance.