Part Details for STP20N10 by STMicroelectronics
Overview of STP20N10 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STP20N10
STP20N10 CAD Models
STP20N10 Part Data Attributes
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STP20N10
STMicroelectronics
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Datasheet
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STP20N10
STMicroelectronics
20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 105 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STP20N10
This table gives cross-reference parts and alternative options found for STP20N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRFS250B_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PF, 3 PIN | STP20N10 vs IRFS250B_FP001 |
IRFS4228TRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | STP20N10 vs IRFS4228TRRPBF |
IPI530N15N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | STP20N10 vs IPI530N15N3G |
SGSP577 | STMicroelectronics | Check for Price | 20A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STP20N10 vs SGSP577 |
RFK25N18 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 180V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | STP20N10 vs RFK25N18 |
RFH25N20 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | STP20N10 vs RFH25N20 |
IRFP240B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP20N10 vs IRFP240B |
2SK3600-01SJ | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | STP20N10 vs 2SK3600-01SJ |
FDB2570 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 22A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | STP20N10 vs FDB2570 |
STP20N10L | STMicroelectronics | Check for Price | 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP20N10 vs STP20N10L |