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Transistors / Power Field-Effect Transistors / STP18N65M2
Datasheets
STP18N65M2 by: STMicroelectronics

N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

Part Details for STP18N65M2 by STMicroelectronics

Results Overview of STP18N65M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STP18N65M2 Information

STP18N65M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP18N65M2

Part # Distributor Description Stock Price Buy
DISTI # 69AH2847
Newark Mosfet, N-Ch, 650V, 12A, 150Deg C, 110W Rohs Compliant: Yes |Stmicroelectronics STP18N65M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 619
  • 1 $3.1600
  • 10 $2.1300
  • 100 $2.0000
  • 500 $1.7700
  • 1,000 $1.7100
  • 3,000 $1.6700
  • 5,000 $1.6500
$1.6500 / $3.1600 Buy Now
DISTI # 497-15557-5-ND
DigiKey MOSFET N-CH 650V 12A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 1003
In Stock
  • 1 $2.6000
  • 50 $1.4688
  • 100 $1.4178
  • 500 $1.2116
  • 1,000 $1.1508
  • 2,000 $1.0737
  • 5,000 $1.0731
$1.0731 / $2.6000 Buy Now
DISTI # STP18N65M2
Avnet Americas Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP18N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.0867
  • 2,000 $1.0799
  • 4,000 $1.0599
  • 6,000 $1.0406
  • 8,000 $1.0220
$1.0220 / $1.0867 Buy Now
DISTI # 511-STP18N65M2
Mouser Electronics MOSFETs N-channel 650 V, 0.275 Ohm typ 12 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant 1005
  • 1 $2.6000
  • 10 $2.1300
  • 25 $1.4700
  • 100 $1.4200
  • 500 $1.2200
  • 1,000 $1.1100
  • 2,000 $1.0700
$1.0700 / $2.6000 Buy Now
STMicroelectronics N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 1005
  • 1 $2.5500
  • 10 $2.0900
  • 25 $1.4400
  • 100 $1.3900
  • 250 $1.3900
  • 500 $1.2000
$1.2000 / $2.5500 Buy Now
Future Electronics Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Tube 7000
Tube
  • 1,000 $1.0500
  • 2,000 $1.0400
  • 4,000 $1.0300
$1.0300 / $1.0500 Buy Now
Future Electronics Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Tube 0
Tube
  • 1,000 $1.1200
  • 2,000 $1.1100
  • 3,000 $1.1000
$1.1000 / $1.1200 Buy Now
Future Electronics Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 7000
null
  • 1,000 $1.1200
  • 2,000 $1.1100
  • 3,000 $1.1000
$1.1000 / $1.1200 Buy Now
DISTI # STP18N65M2
TME Transistor: N-MOSFET, MDmesh™ M2, unipolar, 650V, 8A, Idm: 48A, 110W Min Qty: 1 0
  • 1 $2.2900
  • 10 $1.9600
  • 50 $1.6700
  • 100 $1.6000
$1.6000 / $2.2900 RFQ
DISTI # STP18N65M2
Avnet Silica Trans MOSFET NCH 650V 12A 3Pin TO220 Tube (Alt: STP18N65M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 5000
Buy Now
DISTI # STP18N65M2
EBV Elektronik Trans MOSFET NCH 650V 12A 3Pin TO220 Tube (Alt: STP18N65M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP18N65M2

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STP18N65M2 Part Data Attributes

Parametric Data
STP18N65M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP18N65M2 STMicroelectronics N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STP18N65M2 Related Parts

STP18N65M2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP18N65M2 is -40°C to 150°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 650V.

  • The recommended gate resistor value for the STP18N65M2 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.

  • Yes, the STP18N65M2 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

  • To protect the STP18N65M2 from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.