Part Details for STP14NF12FP by STMicroelectronics
Results Overview of STP14NF12FP by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STP14NF12FP Information
STP14NF12FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP14NF12FP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57P1876
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Newark | Ptd Low Voltage |Stmicroelectronics STP14NF12FP RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Vyrian | Discontinued | 4460 |
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RFQ |
Part Details for STP14NF12FP
STP14NF12FP CAD Models
STP14NF12FP Part Data Attributes
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STP14NF12FP
STMicroelectronics
Buy Now
Datasheet
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STP14NF12FP
STMicroelectronics
Power Field-Effect Transistor, 8.5A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220fp, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 60 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 8.5 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP14NF12FP
This table gives cross-reference parts and alternative options found for STP14NF12FP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP14NF12FP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK80ZFP | STMicroelectronics | $0.5777 | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP4NK80ZFP |
| SPA11N80C3 | Infineon Technologies AG | $1.6094 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs SPA11N80C3 |
| STP30NF10FP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 18A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP30NF10FP |
| STF24NF12 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 24A I(D), 120V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STF24NF12 |
| NDF03N60ZG | onsemi | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs NDF03N60ZG |
| STF20N20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STF20N20 |
| STP4NK50ZFP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP4NK50ZFP |
| STP60NF06FP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP60NF06FP |
| STP5NC90ZFP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP5NC90ZFP |
| STP7NB80FP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP14NF12FP vs STP7NB80FP |
STP14NF12FP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP14NF12FP is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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The recommended storage temperature range for the STP14NF12FP is -40°C to 150°C, with a relative humidity of 60% or less.
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Yes, the STP14NF12FP is designed to handle high-voltage applications up to 12V, but it's essential to ensure that the device is properly biased and that the voltage ratings are not exceeded.
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To handle ESD protection, it's recommended to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats, and ensuring that the device is properly grounded during handling.