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Transistors / Power Field-Effect Transistors / STP13N60DM2
Datasheets
STP13N60DM2 by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package

Part Details for STP13N60DM2 by STMicroelectronics

Results Overview of STP13N60DM2 by STMicroelectronics

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STP13N60DM2 Information

STP13N60DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP13N60DM2

Part # Distributor Description Stock Price Buy
DISTI # STP13N60DM2-ND
DigiKey MOSFET N-CH 600V 11A TO220 Min Qty: 2000 Lead time: 30 Weeks Container: Tube Temporarily Out of Stock
  • 2,000 $0.8225
$0.8225 Buy Now
DISTI # STP13N60DM2
Avnet Americas PTD HIGH VOLTAGE - Rail/Tube (Alt: STP13N60DM2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
RFQ
DISTI # STP13N60DM2
Avnet Silica PTD HIGH VOLTAGE (Alt: STP13N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
LCSC 600V 11A 0.36510V5.5A 110W 1 N-channel TO-220 MOSFETs ROHS 1
  • 1 $0.5173
  • 10 $0.5081
  • 30 $0.5005
  • 100 $0.4944
$0.4944 / $0.5173 Buy Now

Part Details for STP13N60DM2

STP13N60DM2 CAD Models

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STP13N60DM2 Part Data Attributes

Parametric Data
STP13N60DM2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP13N60DM2 STMicroelectronics N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STP13N60DM2 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STP13N60DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.

  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal pad with a low thermal resistance to dissipate heat. Also, ensure good airflow around the device and avoid blocking the heat sink fins. You can also use thermal simulation tools to estimate the device's temperature and optimize your design.

  • The recommended gate drive voltage for the STP13N60DM2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). Consult the datasheet and application notes for more information.

  • Yes, the STP13N60DM2 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is designed to operate in harsh environments. However, it's essential to follow the recommended operating conditions, design guidelines, and testing procedures to ensure the device meets the specific requirements of your application.

  • The internal diode in the STP13N60DM2 can conduct during certain operating conditions, such as when the device is turned off or during voltage transients. To prevent unwanted conduction, use a diode or a resistor in series with the drain-source pins, or implement a gate drive circuit that ensures the device is fully turned off during idle periods.