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Transistors / Power Field-Effect Transistors / STP12N120K5
Datasheets
STP12N120K5 by:
STMicroelectronics
Honest Han
STMicroelectronics
Not Found

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package

Part Details for STP12N120K5 by STMicroelectronics

Results Overview of STP12N120K5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STP12N120K5 Information

STP12N120K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP12N120K5

Part # Distributor Description Stock Price Buy
DISTI # 2807279
Farnell MOSFET, N-CH, 1.2KV, 12A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each 973
  • 1 $10.3672
  • 5 $9.7361
  • 10 $9.1051
  • 50 $8.2938
  • 100 $7.4695
  • 250 $6.6582
$6.6582 / $10.3672 Buy Now
DISTI # 497-STP12N120K5-ND
DigiKey MOSFET N-CH 1200V 12A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 282
In Stock
  • 1 $8.6600
  • 50 $4.7358
  • 100 $4.3581
  • 500 $3.8050
$3.8050 / $8.6600 Buy Now
DISTI # STP12N120K5
Avnet Americas Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP12N120K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $4.0637
  • 2,000 $3.9876
  • 4,000 $3.9268
  • 6,000 $3.8659
  • 8,000 $3.8050
$3.8050 / $4.0637 Buy Now
DISTI # 511-STP12N120K5
Mouser Electronics MOSFETs N-channel 1200 V, 0.62 Ohm typ 12 A MDmesh K5 Power MOSFET in TO-220 package RoHS: Compliant 0
  • 1 $10.5500
  • 10 $9.8600
  • 25 $6.1900
  • 100 $5.7200
  • 500 $5.2400
  • 1,000 $5.2300
$5.2300 / $10.5500 Order Now
STMicroelectronics N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 0
  • 1 $10.3400
  • 10 $9.6600
  • 25 $6.0700
  • 100 $5.6100
  • 250 $5.6100
  • 500 $5.1400
$5.1400 / $10.3400 Buy Now
DISTI # STP12N120K5
TME Transistor: N-MOSFET, MDmesh™ K5, unipolar, 1.2kV, 7.6A, Idm: 48A Min Qty: 1 0
  • 1 $14.3600
  • 5 $12.9300
  • 25 $11.3900
  • 100 $10.2600
  • 500 $9.5800
$9.5800 / $14.3600 RFQ
DISTI # STP12N120K5
Avnet Silica Trans MOSFET NCH 12KV 12A 3Pin3Tab TO220 Tube (Alt: STP12N120K5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 800
Buy Now
DISTI # STP12N120K5
EBV Elektronik Trans MOSFET NCH 12KV 12A 3Pin3Tab TO220 Tube (Alt: STP12N120K5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 150
Buy Now
Vyrian Transistors 397
RFQ

Part Details for STP12N120K5

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STP12N120K5 Part Data Attributes

Parametric Data
STP12N120K5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP12N120K5 STMicroelectronics N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.69 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STP12N120K5 Related Parts

STP12N120K5 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the STP12N120K5 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. It's recommended to consult the datasheet and application notes for specific guidance.

  • To ensure proper cooling, consider the thermal resistance of the package, the PCB layout, and the ambient temperature. Use thermal interfaces like thermal pads or thermal grease to improve heat transfer. Also, ensure good airflow around the device and consider using a heat sink if necessary.

  • The recommended gate drive voltage for the STP12N120K5 is typically between 10V to 15V, but it's dependent on the specific application and switching frequency. Consult the datasheet and application notes for specific guidance.

  • To protect the STP12N120K5 from overvoltage and overcurrent, consider using voltage regulators, overvoltage protection (OVP) circuits, and current sensing and limiting circuits. Also, ensure proper PCB layout and component selection to minimize parasitic inductance and resistance.

  • The recommended dead time for the STP12N120K5 in a half-bridge configuration depends on the specific application and switching frequency. A typical value is around 100-200 ns, but it's recommended to consult the datasheet and application notes for specific guidance.