Datasheets
STP11NM60ND by: STMicroelectronics

N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package

Part Details for STP11NM60ND by STMicroelectronics

Results Overview of STP11NM60ND by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

STP11NM60ND Information

STP11NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP11NM60ND

Part # Distributor Description Stock Price Buy
DISTI # 94T3451
Newark Power Mosfet, N Channel, 10 A, 600 V, 0.37 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics ST... P11NM60ND more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 50
  • 1 $4.3700
  • 10 $3.3100
  • 100 $2.2500
  • 500 $1.9200
$1.9200 / $4.3700 Buy Now
DISTI # 497-8442-5-ND
DigiKey MOSFET N-CH 600V 10A TO220AB Min Qty: 1000 Lead time: 16 Weeks Container: Tube Limited Supply - Call
  • 1,000 $1.9209
$1.9209 Buy Now
DISTI # STP11NM60ND
Avnet Americas Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.9209
  • 2,000 $1.8740
  • 4,000 $1.8515
  • 6,000 $1.8294
  • 8,000 $1.8079
$1.8079 / $1.9209 Buy Now
DISTI # 511-STP11NM60ND
Mouser Electronics MOSFETs N-channel 600V, 10A FDMesh II RoHS: Compliant 683
  • 1 $3.6000
  • 10 $3.5900
  • 25 $2.4000
  • 100 $2.2700
  • 250 $2.2600
  • 500 $2.0700
  • 1,000 $1.9200
$1.9200 / $3.6000 Buy Now
STMicroelectronics N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 683
  • 1 $3.5300
  • 10 $3.5200
  • 25 $2.3500
  • 100 $2.2300
  • 250 $2.2200
  • 500 $2.0300
$2.0300 / $3.5300 Buy Now
Future Electronics N-Channel 600 V 0.45 Ohm FDmesh™ II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks Container: Tube 950
Tube
  • 50 $0.9750
  • 200 $0.9450
  • 750 $0.9200
  • 1,250 $0.9100
  • 2,500 $0.8800
$0.8800 / $0.9750 Buy Now
DISTI # 86929526
Verical Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2437 Americas - 2250
  • 6 $4.8642
  • 25 $2.9196
  • 100 $2.6377
  • 500 $1.6824
  • 1,000 $0.8597
  • 5,000 $0.8511
$0.8511 / $4.8642 Buy Now
DISTI # STP11NM60ND
TME Transistor: N-MOSFET, FDmesh™ II, unipolar, 600V, 6.3A, 90W Min Qty: 1 37
  • 1 $2.2600
  • 10 $2.0900
  • 50 $1.9100
  • 100 $1.8300
  • 500 $1.6300
  • 1,000 $1.5500
  • 2,000 $1.4700
$1.4700 / $2.2600 Buy Now
DISTI # STP11NM60ND
Avnet Silica Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # STP11NM60ND
EBV Elektronik Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP11NM60ND

STP11NM60ND CAD Models

STP11NM60ND Part Data Attributes

STP11NM60ND STMicroelectronics
Buy Now Datasheet
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STP11NM60ND STMicroelectronics N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
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Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STP11NM60ND Related Parts

STP11NM60ND Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STP11NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.

  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the layout guidelines provided in the datasheet.

  • The maximum input voltage that the STP11NM60ND can handle is 18V, but it is recommended to operate within the recommended input voltage range of 8-15V for optimal performance.

  • The STP11NM60ND has built-in overcurrent protection and thermal shutdown, but it is still recommended to add external protection circuits and to follow proper thermal design guidelines to ensure reliable operation.

  • The STP11NM60ND is rated for operation up to 150°C, but the maximum operating temperature may be limited by the specific application and the thermal design of the system.