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N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP11NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3451
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Newark | Power Mosfet, N Channel, 10 A, 600 V, 0.37 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics ST... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 50 |
|
$1.9200 / $4.3700 | Buy Now |
DISTI #
497-8442-5-ND
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DigiKey | MOSFET N-CH 600V 10A TO220AB Min Qty: 1000 Lead time: 16 Weeks Container: Tube | Limited Supply - Call |
|
$1.9209 | Buy Now |
DISTI #
STP11NM60ND
|
Avnet Americas | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$1.8079 / $1.9209 | Buy Now |
DISTI #
511-STP11NM60ND
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Mouser Electronics | MOSFETs N-channel 600V, 10A FDMesh II RoHS: Compliant | 683 |
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$1.9200 / $3.6000 | Buy Now |
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STMicroelectronics | N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 683 |
|
$2.0300 / $3.5300 | Buy Now |
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Future Electronics | N-Channel 600 V 0.45 Ohm FDmesh™ II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks Container: Tube |
950 Tube |
|
$0.8800 / $0.9750 | Buy Now |
DISTI #
86929526
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Verical | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2437 | Americas - 2250 |
|
$0.8511 / $4.8642 | Buy Now |
DISTI #
STP11NM60ND
|
TME | Transistor: N-MOSFET, FDmesh™ II, unipolar, 600V, 6.3A, 90W Min Qty: 1 | 37 |
|
$1.4700 / $2.2600 | Buy Now |
DISTI #
STP11NM60ND
|
Avnet Silica | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 1000 |
|
Buy Now | |
DISTI #
STP11NM60ND
|
EBV Elektronik | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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STP11NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP11NM60ND
STMicroelectronics
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |