| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
57P1520
|
Newark | Mosfet Transistor, N Channel, 500 Ma, 100 V, 700 Mohm, 10 V, 3 V |Stmicroelectronics STN1NF10 RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | ||
| Bristol Electronics | 1908 |
|
RFQ | ||||
| Quest Components | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3926 |
|
$0.1913 / $0.4590 | Buy Now | ||
| Quest Components | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1526 |
|
$0.3060 / $0.7650 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
|
Part Package Code
|
SOT-223
|
|
Package Description
|
SOT-223, 4 PIN
|
|
Pin Count
|
4
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
STMicroelectronics
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
1 A
|
|
Drain-source On Resistance-Max
|
0.8 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PDSO-G4
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
4
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
2.5 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMFT1N10ET1 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | Motorola Mobility LLC | STN1NF10 vs MMFT1N10ET1 |
| MMFT1N10E | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN | Motorola Mobility LLC | STN1NF10 vs MMFT1N10E |
| IRFL9110TRPBF | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Vishay Siliconix | STN1NF10 vs IRFL9110TRPBF |
| IRFL9110PBF | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | Vishay Siliconix | STN1NF10 vs IRFL9110PBF |
| IRFL9110PBF | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | STN1NF10 vs IRFL9110PBF |
| MMFT1N10ET3 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | Motorola Mobility LLC | STN1NF10 vs MMFT1N10ET3 |
| MMFT1N10E | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, CASE 318E-04, 4 PIN | Motorola Semiconductor Products | STN1NF10 vs MMFT1N10E |
